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研制了一款E波段高效率GaN功率放大器单片微波集成电路(MMIC)。通过优化器件结构、GaN高电子迁移率晶体管(HEMT)材料结构，采用电子束T型栅工艺，制备了栅长0.1μm的4×25μm GaN HEMT。测试结果表明，该器件最大饱和电流密度为1.2 A/mm,峰值跨导为540 mS/mm,小信号下测试截止频率fT和最大振荡频率fmax分别为110 GHz和240 GHz。采用上述工艺设计了GaN功率放大器MMIC,在工作电压18 V、电流密度200 mA/mm的测试条件下，在71～78 GHz频段内，其饱和输出功率为33.0～33.5 dBm,饱和输出功率密度达到2.49 W/mm,功率附加效率大于14.8%,功率附加效率最大值达到21.1%,线性增益大于19.0 dB。该MMIC可广泛用于5G通信发射前端。
Abstract：An E-band high-efficiency GaN power amplifier monolithic microwave integrated circuit(MMIC) was developed. A 4×25 μm device with a gate length of 0.1 μm was fabricated on GaN high electron mobility transistor(HEMT) epitaxial wafers by optimizing design and AlGaN/GaN HEMT structure and electron beam T-gate process. Test results show the device has a maximum saturation current density of 1.2 A/mm, a peak transconductance of 540 mS/mm, a small signal a cutoff frequency(fT) of 110 GHz and a maximum oscillation frequency(fmax) of 240 GHz. Using this process, a GaN power amplifier MMIC was designed. Under test conditions of 18 V working voltage and 200 mA/mm current density, the circuit achieves saturated output power of 33.0-33.5 dBm with a power density of 2.49 W/mm, power-added efficiency(PAE) above 14.8% with a peak PAE of 21.1%, and linear gain above 19.0 dB at 71-78 GHz. This MMIC can be widely applied in 5G communication transmitter front-ends.
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基本信息:
DOI：10.13250/j.cnki.wndz.25090201
中图分类号:TN722.75
引用信息:
[1]廖龙忠,何美林,毕胜赢等.E波段高效率GaN功率放大器MMIC[J].微纳电子技术,2025,62(09):17-22.DOI:10.13250/j.cnki.wndz.25090201.
基金信息: