| 524 | 6 | 44 |
| 下载次数 | 被引频次 | 阅读次数 |
等离子增强化学气相淀积(PECVD)法制备的氮化硅薄膜具有沉积温度低、生长速率高和残余应力可调节等特点,研究其力学特性对研制MEMS器件和系统具有重要意义。采用HQ-2型PECVD淀积台,在沉积温度为350℃,NH3流量为30cm3/min的条件下,通过改变氩气稀释至5%的SiH4流量和射频功率大小,制备了具有压应力、微应力和张应力的多种氮化硅薄膜样品。采用纳米压痕仪Nanoidenter-G200对淀积薄膜的杨氏模量和硬度进行测试,结果表明,在较小的SiH4流量和较高的射频功率条件下,淀积的氮化硅薄膜具有更高的杨氏模量和硬度。
Abstract：The PECVD silicon nitride film has merits of lower deposition temperature,higher deposition rate and adjustable residual stress,etc.It is important to investigate the processing parameters on the mechanical properties of silicon nitride films for the design and fabrication of MEMS devices and systems.The silicon nitride films of compressive stress,microstress and tensile stress were deposited by HQ-2 PECVD through changing the flow of 5% SiH4 diluted by Ar2 and radio-frequency power with the deposition temperature of 350 ℃ and the NH3 flow of 30 cm3/min.The Young's modulus and hardness of the PECVD silicon nitride films were mea-sured with the Nanoindenter-G200.The result shows that higher Young's modulus and hardness can be obtained under the conditions of small gas flow of diluted SiH4 and high radio-frequency power.
[1]VLASSAK J J,NIX WD.Anewbulge test technique for the de-termination of Young's modulus and Poisson's ratio of thin films[J].J Mater Res,1992,7(12):3242-3249.
[2]NAJAFI K,SUZUKI K.A novel technique and structure for themeasurement of intrinsic stress and young's modulus of thin films[C]//Proceedings of the IEEE Conference on Micro Electro Me-chanical Systems.Salt Lake City UT,USA,1989:96-97.
[3]HOUMMADY M,FARNAULT E,KAWAKATSU H,et al.Ap-plications of dynamic:techniques for accurate determination of sili-coni nitride Young's moduli[C]//Proceedings of the Interna-tional Conference on Solid-State Sensors and Actuators.Chicago,USA,1997:615-618.
[4]YE X Y,ZHANG J H,ZHOU Z Y,et al.Measurement ofYoung's modulus and residual stress of micromembranes[C]//Proceedings of the7thInternational Symposium on Micro Machineand Human Science.Nagoya,Japan,1996:125-129.
[5]TAI Y C,MULLER R S.Measurement of Young's modulus onmicrofabricated structures using a surface profiler[C]//Pro-ceedings of the Conference on Micro Electro Mechanical Systems.Napa Valley,CA,USA,1990:147-152.
[6]ZHANG TY,SUY J,QIAN C F,et al.Microbridge testing ofsilicon nitride thin films deposited on silicon wafers[J].Actamater,2000,48(11):2843-2857.
[7]WALSHP,OMELTCHENKO A,KALIA R K,et al.Nanoindenta-tion of silicon nitride:a multimillion-atom molecular dynamicsstudy[J].Applied Physics Letters,2003,82(1):118-120.
[8]KAUSHIK A,KAHN H,HEUER A H.Wafer-level mechanicalcharacterization of silicon nitride MEMS[J].Journal of Micro-electromechanical Systems,2005,14(2):359-367.
[9]CIANCI E,COPPAA,FOGLIETTI V.Young's modulus and re-sidual stress of DF PECVD silicon nitride for MEMS free-standingmembranes[J].Microelectronic Engineering,2007,84(5/6/7/8):1296-1299.
[10]CHEN P H,YANG C H,TSAI C Y,et al.Young's mo-dulusof high aspect ratio Si3N4nano-thickness membrane[C]//Proceedings of the7thIEEE Conference on Nanotechnology.Hong Kong,China,2007:1341-1344.
[11]HUANG H,WINCHESTER K,LIU Y,et al.Determinationof mechanical properties of PECVD silicon nitride thin films fortunable MEMS Fabry-P′erot optical filters[J].J MicromechMicroeng,2005,15(3):608-614.
[12]HUANGA H,WINCHESTER K J,SUVOROVA A,et al.Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films[J].Materials Scienceand Engineering:A,2006,435/436:453-459.
[13]ISONO Y,NAMAZU T,SAITO Y.Effect of gas flow ratio inPECVD on elastic properties of sub-micron thick silicon nitridefilms for MEMS[C]//Proceedings of the13thInternationalConference on Solid-State Sensors,Actuators and Microsystems.Seoul,Korea,2005:847-850.
[14]JUNG Y G,LAWN B R.Evaluation of elastic modulus andhardness of thin films by nanoindentation[J].J Mater Res,2004,19(10):3076-3080.
[15]HUANG H,WINCHESTER K,ANTOSZEWSKI J.Eva-luationof elastic modulus and stress gradient of pecvd silicon nitride thinfilms[C]//Proceedings of the Structural Inte-grity and Frac-ture International Conference.Brisbane,Australia,2004:149-154.
[16]ZAGREBELNY A V,CARTER C B.Indentation of strained sili-cate-glass films on alumina substrates[J].Scripta Ma-terialia,1997,37(12):1869-1875.
[17]WINCHESTER K J,DELL J M.Nano-indentation characterisa-tion of PECVD silicon nitride films[C]//Proceedings of Opto-electronic and Microelectronic Materials and Devices.CA,USA,2000:117-120.
[18]于映,吴清鑫,罗仲梓.氮化硅薄膜力学性能的研究及其在射频MEMS开关中的应用[J].传感技术学报,2006,19(5):1967-1969.
基本信息:
DOI：
中图分类号:O484.2
引用信息:
[1]王小飞,韩建强,宋美绚等.淀积参数对PECVD氮化硅薄膜力学特性的影响[J].微纳电子技术,2011,48(04):233-236.
基金信息:
浙江省自然科学基金资助项目(Y1080072);; 国家自然科学基金资助项目(61076110)