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在太阳能电池、忆阻器、场效应晶体管等多个领域，二维卤化铅钙钛矿在引入有机阳离子以隔绝湿气与氧气来提高材料稳定性的同时，也使得其导电性受到影响。另外，二维卤化铅钙钛矿中存在重金属有毒元素铅，会对环境和人体产生危害。研究认为B位掺杂是解决晶体毒性问题和提高光电性能的主要途径。Pb2+具有非常稳定的空间结构，掺杂元素很难进行取代，所以B位掺杂是一个技术难题。通过原位掺杂的方法在二维卤化铅钙钛矿(PEA)2PbBr4中掺杂锡，以掺杂后的(PEA)2PbBr4作为半导体层制备场效应晶体管。该晶体管为p型，相较于未掺杂的器件，其在光照下表现出更为显著的场效应。
Abstract：In various fields such as solar cells, memristors and field-effect transistors, two-dimensional lead halide perovskites intraduce organic cations to enhance material stability by isolating moisture and oxygen, but this also adversely affects their conductivity. In addition, the presence of toxic heavy metal lead in two-dimensional lead halide perovskites poses environmental and health risks. Research suggests that B-site doping is considered a primary approach to mitigate the toxicity and enhance the optoelectronic performance of crystals. Pb2+ has a very stable spatial structure, making it hard for doping elements to substitute, so B-site doping is a technical difficulty. Sn was doped into the two-dimensional lead halide perovskite(PEA)2PbBr4 through in-situ doping method, and the doped(PEA)2PbBr4 was used as the semiconductor layer to fabricate field-effect transistors. The prepared transistors exhibites p-type characteristics and demonstrates more significatnt field effect under light illumination compared to undoped devices.
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基本信息:
DOI：10.13250/j.cnki.wndz.25070301
中图分类号:TB34
引用信息:
[1]孙艺,刘淇铭,王钟石等.锡掺杂二维卤化铅钙钛矿(PEA)_2PbBr_4的电学性能研究[J].微纳电子技术,2025,62(07):37-43.DOI:10.13250/j.cnki.wndz.25070301.
基金信息: