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基于磁中性环路放电(NLD)等离子体刻蚀机设备原理,研究了SF6+O2氛围下,不同偏置电源功率、射频(RF)天线功率以及O2和SF6流量比率等工艺参数变化对NLD设备刻蚀SiC的影响;并研究了不同径向位置的SiC材料在刻蚀过程中的均匀性。结果表明,增加偏置电源功率可以提高刻蚀速率,却降低了金属的抗刻蚀比;增加RF天线功率,能降低偏压以及离子轰击能量,同时刻蚀速率先增大后减小;增加O2和SF6流量比率,刻蚀速率先增大后减小,偏压缓慢增大;刻蚀不同径向位置的SiC材料,均匀性为1.94%,刻蚀速率为738 nm/min。
Abstract：Based on the setup principle of the magnetic neutral loop discharge(NLD)plasma etcher,the effects of the process parameters on the NLD etching of SiC were studied in the ambience of SF6+O2,such as the bias supply power,radio frequency(RF)antenna power,and O2 and SF6flow ratio.And the etching uniformity of SiC materials at different radial positions was also studied.The results show that the increase in the bias power supply can improve the etch rate,but reduce the etch-resistant ratio of metal.The increase in the RF antenna power can reduce the bias and ion bombardment energy,meanwhile the etch rate increases at first and then decreases.By increasing the flow ratio of O2 and SF6,the etch rate increases at first and then decreases,and the bias voltage increases slowly.The uniformity of the etched SiC at different radial positions is 1.94% and the etching rate is 738 nm/min.
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基本信息:
DOI：10.13250/j.cnki.wndz.2015.01.009
中图分类号:TN305.7
引用信息:
[1]张伟,孙元平,刘彬.SiC材料的NLD快速均匀刻蚀[J].微纳电子技术,2015,52(01):54-58+63.DOI:10.13250/j.cnki.wndz.2015.01.009.
基金信息:
国家自然科学基金资助项目(11304356)