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基于水平热壁化学气相沉积(CVD)技术,采用原位刻蚀方法,在3英寸(1英寸=2.54 cm)(0001)Si面零偏4H-SiC衬底上生长了高质量的同质外延层,并对其主要工艺参数和生长机制进行了探讨。利用微分干涉相差显微镜、喇曼散射及湿法腐蚀等表征手法对样品进行了测试分析。测量结果表明,4H-SiC占整个外延表面积的99%以上,此外,该工艺消除了4H-SiC同质外延层中的基面位错,提高了外延层的质量。同时对零偏4H-SiC衬底的同质外延的工艺过程和理论进行了研究和讨论,实验发现,生长前的原位刻蚀、初始生长参数、碳硅原子比以及生长温度对于维持外延层晶型、避免3C-SiC多型的产生具有重要影响。
Abstract：Based on the horizontal hot wall chemical vapor deposition(CVD)technology,the high quality homogeneous epitaxial layer was grown on the 3 inch(1 inch=2.54 cm)(0001)Si surface on-axis 4H-SiC substrate by the in-situ etching method.The main process parameters and growth mechanisms were discussed.The samples were tested and analyzed by characterization techniques of the differential interference contrast microscope,Raman scattering and wet etching and so on.The test results show that the 4H-SiC accounts for more than 99% of the whole epitaxial surface area,besides,the process eliminates the basal plane dislocations on the 4H-SiC homogeneous epitaxial layer,and improves the quality of the epitaxial layer.Meanwhile,the process and theory of homoepitaxial growth on on-axis 4H-SiC epitaxial substrates were studied and discussed.The experiment indicates that the in-situ etching,initial growth parameters,carbon silicon atom ratio and growth temperature have an important influence on how to maintain the epitaxial layer crystal structure and avoid the 3C-SiC polymorphism.
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基本信息:
DOI：10.13250/j.cnki.wndz.2014.01.008
中图分类号:TN304.2
引用信息:
[1]孙哲,吕红亮,王悦湖等.零偏4H-SiC衬底的同质外延方法[J].微纳电子技术,2014,51(01):48-52.DOI:10.13250/j.cnki.wndz.2014.01.008.
基金信息:
国家自然科学基金资助项目(61006008,61274079);; 预先研究项目(51308030115);; 国家电网公司科技项目(SGRI-WD-71-13-004)