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设计了电流模式曲率补偿的CMOS带隙基准源,基本原理是利用两个偏置在不同电流特性下的三极管,得到关于温度的非线性电流,补偿VEB的高阶温度项。用标准的0.6μm CMOS BSIM3v3模型库对该带隙基准源进行了仿真,结果表明在±1.5 V的电源电压下,输出基准电压为-1.418 55 V,-55～125℃较宽的温度范围内,输出电压的变化只有0.35 mV,有效温度系数达到1.37×10-6/℃。同时,带隙基准源具有较高的电源抑制比,在2 kHz下达到73 dB。
Abstract：A current-mode curvature-compensated CMOS bandgap reference was designed.The foundamental principle is to obtain nonlinear current with temperature and compensate the higher term of VEB with two BJT biased at different current characteristic.The bandgap reference was stimulated with BSIM3v3 models of a standard 0.6 μm CMOS.The results show that the output reference voltage is-1.418 55 V at supplied power of ±1.5 V,with peak-to-peak variation being of only 0.35 mV at-55～125 ℃,and effective temperature coefficient is 1.37×10-6/℃.The power supply rejection rate(PSRR) of the bandgap reference is 73 dB at 2 kHz.
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基本信息:
DOI：
中图分类号:TN432
引用信息:
[1]王召,张志勇,赵武等.±1.5V 1.37×10~(-6)/℃电流模式CMOS带隙基准源的分析与设计[J].微纳电子技术,2007,No.367(12):1087-1090.
基金信息:
教育部“春晖计划”基金项目(Z2005-1-61001)