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基于0.35μm GaN高电子迁移率晶体管(HEMT)工艺研制了一款工作于10.7～12.8 GHz的紧凑型功率放大器单片微波集成电路(MMIC)。引入双场板结构,显著提升器件的击穿电压,超过200 V;通过热电联合设计,针对栅极间距与末级布局进行了优化,使器件的热阻降低至约0.52℃/W;设计了融合功分/功合、阻抗变换与谐波调谐的匹配网络,采用多元件串联结构提升击穿电压,增强电路的鲁棒性。测试结果表明,在10.7～12.8 GHz内,芯片(面积4.1 mm×5.3 mm)的饱和输出功率典型值为100 W,全频段内均大于95 W;功率附加效率典型值为40%,全频段内均大于38%;功率增益高于22 dB。
Abstract：Based on a 0.35 μm GaN high electron mobility transistor(HEMT) process, a compact power amplifier monolithic microwave integrated circuit(MMIC) operating at 10.7-12.8 GHz was developed. A dual-field plate structure was introduced to significantly enhance the device breakdown voltage, exceeding 200 V. The gate spacing and final-stage layout were specifically optimized through electro-thermal co-design, reducing the device's thermal resistance to about 0.52 ℃/W. A matching network integrating power division/power combination, impedance transformation, and harmonic tuning was designed. Furthermore, multi-component series configuration was employed to improve breakdown voltage and enhance circuit robustness. Measurement results demonstrate that at 10.7-12.8 GHz, the chip with an area of 4.1 mm×5.3 mm achieves a typical saturated output power of 100 W(>95 W across the entire frequency band), the typical power added efficiency is 40%(>38% across the entire frequency band), and the power gain exceeds 22 dB.
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基本信息:
DOI：10.13250/j.cnki.wndz.26030205
中图分类号:TN722.75
引用信息:
[1]李泽楷,吴洪江,范悬悬,等.一种10.7～12.8 GHz百瓦级功率放大器MMIC[J].微纳电子技术,2026,63(03):106-113.DOI:10.13250/j.cnki.wndz.26030205.