| 251 | 3 | 19 |
| 下载次数 | 被引频次 | 阅读次数 |
紫外探测器在军事高科技和民品市场的紫外通信和成像方面具有很高的价值。探讨了Al GaNpin紫外探测器的制作工艺和材料及结构对器件性能的影响。提出改进 pin紫外探测器性能的措施
Abstract：The ultraviolet detectors have wide applications in the field of ultraviolet communication and image of both military technology and commerce market. Both the fabrication techniques and effect of materials or structure on the performance of AlGaN based pin ultraviolet detectors were discussed. We pointed out the methods are of improving the performance of AlGaN based pin ultraviolet detectors.
[1] YEHLS ,LEEML ,SHEUJK ,etal.SolidStateElectronics,47:2003,873878.
[2] CHOWDHURYU ,WONGMM ,COLLINESCJ ,etal.JCrystGrowth,248,2003,552555.
[3] MORKOCH ,CARLOAD ,CINGOLANIR .SolidStateElec tronics[J].2002,46:157202.
[4] SANDVIKP ,MK ,SHAHEDIPOURF ,etal.JCrystGrowth,2001,231:366370.
[5] MONROYE ,CALLEF ,PAUJL ,etal.JCrystGrowth,2001,230:537543.
[6] KOYAMAY ,HASHIZUMET ,HASEGAWAH .SolidStateElectronics[J].1999,43:14831488.
[7] XUGY ,SALAVDORA ,KIMW ,etal.ApplPhysLett,1997,71(15):2154.
[8] PARISHG ,KELLERS ,KOZODOYP ,etal.ApplPhysLett,1999,175(2):2154.
[9] TARSAEJ,KOZODOYP ,IBBETSONJ,etal.ApplPhysLett,2000,177(3):316.
[10] BROWNJD ,YUZ ,MATTHEWSJ ,etal.MRSinternetJ[J]NitridesemicondRes,1999,4:9.
[11] BROWNJD ,BONEYJ ,MATTHEWSJ,etal.MRSinternetJ[J].NitridesemicondRes,2000,5:6.
基本信息:
DOI：10.13250/j.cnki.wndz.2003.z1.126
中图分类号:TH744.42
引用信息:
[1]周劲,郝一龙,武国英.AlGaN PIN结构紫外探测器研制和建模分析[J].微纳电子技术,2003(Z1):422-425.DOI:10.13250/j.cnki.wndz.2003.z1.126.
2003-08-25
2003-08-25