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在不同氢气流量下,以丙酮为碳源,采用热丝法化学气相沉积在p型(111)单晶硅衬底上制备了金刚石薄膜。用金相显微镜、X射线衍射以及原子力显微镜对金刚石薄膜表面形貌以及质量进行了表征,结果表明:在氢气流量为150~200 mL/min时,金刚石薄膜择优(111)晶面生长,且金刚石颗粒逐渐变大,分布逐渐不均匀,在氢气流量为200 mL/min时,甚至出现二次形核。在氢气流量为200~250 mL/min时,金刚石薄膜择优(100)晶面生长,金刚石颗粒逐渐变小,分布逐渐均匀。
Abstract：At different hydrogen flow rates,using the acetone as the carbon source,the diamond films were deposited on(111)p-silicon substrates by the hot filament chemical vapor deposition(HFCVD).The surface morphology and quality of the diamond films were characterized by the metallurgical microscope,X-ray diffraction and atomic force microscopy.The results show that at the hydrogen flow rates of 150~200 mL/min,diamond films grow with preferred(111)-orientation,and the diamond particle size increases and the distribution is gradually uneven,even the second nucleation occurs at the hydrogen flow rates of 200 mL/min.At the hydrogen flow rate of200~250 mL/min,the diamond films grow with preferred(100)-orientation,and the diamond particle size decreases and the distribution is gradually uniform.
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基本信息:
DOI：10.13250/j.cnki.wndz.2014.10.011
中图分类号:TN304.055
引用信息:
[1]石双振,杨瑞霞,康强.氢气流量对金刚石薄膜制备的影响[J].微纳电子技术,2014,51(10):679-683.DOI:10.13250/j.cnki.wndz.2014.10.011.
基金信息:
中国电子科技集团公司第四十六研究所创新基金资助项目(CJ20130307)
2014-10-15
2014-10-15