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对基于4H-SiC和6H-SiC的垂直双扩散MOSFET(VDMOSFET)的单粒子烧毁(SEB)效应进行了对比研究。建立了器件的二维仿真结构,对不同SiC材料构成的器件物理模型及其材料参数进行了修正。利用Silvaco TCAD软件进行了二维器件的特性仿真,得到了两器件SEB效应发生前后的漏极电流曲线和电场分布图。研究结果表明,4H-SiC和6H-SiC VDMOSFET的SEB阈值电压分别为335 V和270 V,发生SEB效应时的最大电场强度分别为2.5 MV/cm和2.2 MV/cm,4H-SiC材料在抗SEB效应方面比6H-SiC材料更有优势。所得结果可为抗辐射功率器件的设计及应用提供参考。
Abstract：The single-event burnout(SEB)effects of 4H-SiC and 6H-SiC vertical double-diffused MOSFETs(VDMOSFETs)were compared and studied.The two-dimensional simulation structure of the devices was built,and the physical model and material parameters of the devices fabricated with different SiC materials were modified.The characteristics simulation of the two-dimensional devices was carried out with Silvaco TCAD software,and the drain current curves and electric field distribution profiles of the two devices before and after the SEB effect were obtained.The research results show that the SEB threshold voltages of the 4H-SiC and 6H-SiC VDMOSFETs are 335 V and 270 V,respectively.Besides,when the SEB effect occurs,the maximum electric field intensities of the two devices are 2.5 MV/cm and 2.2 MV/cm,respectively.The4H-SiC material is better than the 6H-SiC material in the aspect of anti-SEB effect.The obtained results can provide a reference for the design and application of the anti-radiation power device.
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基本信息:
DOI：10.13250/j.cnki.wndz.2017.02.002
中图分类号:TN386
引用信息:
[1]刘忠永,蔡理,刘小强,等.4H-SiC和6H-SiC功率VDMOSFET的单粒子烧毁效应[J].微纳电子技术,2017,54(02):80-85.DOI:10.13250/j.cnki.wndz.2017.02.002.
基金信息:
国家自然科学基金资助项目(11405270)
2017-02-15
2017-02-15