微纳电子技术

以高纯度铝作为溅射靶材,高纯度氩气作为溅射气体,在低温环境下利用直流磁控溅射设备在硅衬底上成功制备了铝膜。通过单一因素控制法研究了溅射功率、腔室压强和基片转速三个关键因素对铝膜的均匀性、致密性和附着性的影响。采用台阶仪、扫描电子显微镜(SEM)等测试设备以及磷酸腐蚀速率法、胶带法等测试方法对铝膜质量进行了表征与分析,得出了不同工艺参数与铝膜的均匀性、致密性和附着性的关系,并且对结果进行了优化。实验结果表明:溅射功率和腔室压强影响铝膜的均匀性、致密性和附着性;基片转速影响铝膜的均匀性和附着性,并得到了各因素对铝膜质量的影响趋势及影响机理。最终得到制备铝膜的最优工艺参数为溅射功率300 W、腔室压强3.7×10-3 Torr(1 Torr=133.3 Pa)、基片转速6 r/min。

With the high purity aluminum as the sputtering target and high purity argon as the sputtering gas,the aluminum films were successfully fabricated on a silicon substrate by a DC magnetron sputtering apparatus in a low temperature environment.The influences of three key factors,such as sputtering power,chamber pressure and substrate rotate speed,on the uniformity,compactness and adhesion of the aluminum films were studied by single factor control method.The qualities of the aluminum films were characterized and analyzed by step meter,scanning electron microscope(SEM)and other test equipment,and phosphoric acid corrosion rate method and tape method.The relationships of different process parameters and the uniformity,compactness and adhesion of the aluminum films were obtained,and the results were optimized.The experiment results show that the sputtering power and chamber pressure affect the uniformity,compactness and adhesion of the aluminum films,and the substrate rotate speed affects the uniformity and adhesion of the aluminum films.The influence trend and impact mechanism of various factors on the qualities of aluminum films were obtained.Finally,the optimal process parameters for the preparation of aluminum films are the sputtering power of 300 W,the chamber pressure of 3.7×10-3 Torr(1 Torr=133.3 Pa)and the substrate rotate speed of 6 r/min.