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氮化硅陶瓷兼具优良的力学性能和导热性能，在大功率半导体器件封装领域有着广泛的应用前景。采用MgO-Y_2O3作为烧结助剂、亚微米级氮化硅粉体作为原料，利用流延成型工艺制备氮化硅带料。具体研究了分散剂质量分数、浆料固含量、粘结剂质量分数以及塑化剂和粘结剂的质量比对氮化硅带料制备的影响规律。此外研究了气压烧结后氮化硅陶瓷的微观结构及性能。通过优化浆料中各组分的添加量，成功制备了外观无缺陷、生坯密度高达2.09 g/cm3的氮化硅带料。经气压烧结后的氮化硅陶瓷具备良好的性能，其体积密度为3.24 g/cm3,抗弯强度为756.41 MPa,热导率可达84.46 W/(m·K)。
Abstract：Silicon nitride ceramics have broad application prospects in the field of high-power semiconductor devices because of their excellent mechanical properties and thermal conductivity. With MgO-Y_2O3 as the sintering additive and submicron silicon nitride power as the raw material, the silicon nitride tapes were prepared by tape casting process. The influence laws of dispersant mass fraction, solid content of slurry, binder mass fraction and mass ratio of plasticizer and binder on the preparation of silicon nitride tapes were studied. The microstructure and properties of silicon nitride ceramics after gas-pressure-sintering were also investigated. The silicon nitride tapes with non-defective appearance and the green tape density of 2.09 g/cm3 were successfully prepared by optimizing the addition amount of each component in the slurry. The gas-pressure-sintered silicon nitride ceramics show excellent properties, the volume density is 3.24 g/cm3,the bending strength is 756.41 MPa and the thermal conductvity reaches 84.46 W/(m·K).
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基本信息:
DOI：10.13250/j.cnki.wndz.24080002
中图分类号:TQ174.1
引用信息:
[1]刘思雨,刘林杰,张义政,等.氮化硅陶瓷的流延制备及性能[J].微纳电子技术,2024,61(08):18-23.DOI:10.13250/j.cnki.wndz.24080002.
2024-08-15
2024-08-15