| 2,576 | 34 | 89 |
| 下载次数 | 被引频次 | 阅读次数 |
简述了金刚石半导体材料的主要制备方法,以及掺杂技术及其在器件制备中应用的研究现状。重点介绍了微波等离子体化学气相沉积(MPCVD)法制备高质量金刚石的优势以及在生长速率、晶体尺寸和晶体质量等方面的研究进展及阻碍因素,并探讨了实现金刚石大尺寸高质量生长的方法。通过对金刚石进行掺杂,可使其呈现p型和n型导电。总结了金刚石p型、n型掺杂及共掺杂的研究现状,并分析了金刚石在掺杂过程中出现的问题,探讨了p型掺杂和n型掺杂的研究方向。最后给出了金刚石在电力电子器件、探测器和场发射器件中的应用现状,并对金刚石的未来发展方向作出了展望。
Abstract：The main preparation method of the diamond semiconductor material,the research status of doping techniques and their application in the device fabrication are briefly described.The advantages of the microwave plasma chemical vapor deposition(MPCVD)method for high-quality diamond preparation are mainly presented.The research advances and obstacles about the growth rate,growth size and quality of diamond are introduced,and some methods to obtain large-size high-quality diamond semiconductor materials are discussed.Besides,the diamond can show ptype and n-type conductivity through doping.The research statuses of p-type doping,n-type doping and co-doping for diamond are summarized.The problems in the doping of diamond are analyzed,and the research trends of the p-type doping and n-type doping are discussed.Finally,the application statuses of diamond semiconductor in the fields,such as power electronic devices,detectors and field emission devices,are introduced,and the future development directions of diamond are prospected.
[1]GU J T,HUANG K,FANG K M,et al.Characterization of the interior structure of synthetic diamond particles[J].Journal of Crystal Growth,2016,451(1):165-169.
[2]ISBERG J,HAMMERSBERG J,JOHANSSON E,et al.High carrier mobility in single-crystal plasma-deposited diamond[J].Science,2002,297(5587):1670-1672.
[3]REGGTANL I,BOSI S,CANALI C,et al.Hole-drift velocity in natural diamond[J].Physical Review:B,1981,23(6):3050-3057.
[4]WORT C J H,BALMER R S.Diamond as and electronic material[J].Materials Today,2008,11(1/2):22-28.
[5]MAY P W.Diamond thin film:a21st-century material[J].Philosophical Transactions:Mathematical Physical and Engineering Sciences,2000,358(1766):473-495.
[6]吕反修.金刚石膜制备与应用[M].北京:科学出版社,2014:461-553.
[7]BUNDY F P,HALL H T,STRONG H M,et al.Manmade diamonds[J].Nature,1955,176(4471):51-55.
[8]DERYAGIN B V,SPITSYN B N,BUILOV L L,et al.Synthesis of diamond crystals on non-diamond backing[J].Doklady Akademii Nauk SSSR,1976,231(2):333-335.
[9]SEIICHIRO M,YOICHIRO S,MUTSUKAZU K,et al.Vapor deposition of diamond particles from methane[J].Japanese Journal of Applied Physics,1982,21(4):L183-L185.
[10]黄平,汪建华,刘繁,等.微波法制备单晶金刚石的研究进展[J].武汉工程大学学报,2016,38(4):357-361.
[11]LIU H,HANYU H,TANAKA M.Method of removing diamond coating and method of manufacturing diamond-coated body:US,20010028919[P].2003-08-26.
[12]SALGUEIREDO E,AMARAL M,NETO M A,et al.HFCVD diamond deposition parameters optimized by a Taguchi matrix[J].Vacuum,2011,85(6):701-704.
[13]GUO J C,LI C M,LIU J L,et al.Structural evolution of Ti destroyable interlayer in large-size diamond film deposition by DC arc plasma jet[J].Applied Surface Science,2016,370:237-242.
[14]吕反修.大面积光学级金刚石自支撑膜制备、性能及其在高技术领域应用前景[J].中国表面工程,2010,23(3):1-13.
[15]LI C M,WANG L M,CHEN L X,et al.Free-standing diamond films deposited by DC arc plasma jet on graphite substrates with a destroyable Ti interlayer[J].Diamond and Related Materials,2009,18(11):1348-1352.
[16]YAN C,YOGESH K V,MAO H,et al.Very high growth rate chemical vapor deposition of single-crystal diamond[J].Proceedings of the National Academy of Sciences of the United Statess of America,2002,99(20):12523-12525.
[17]LIANG Q,CHIN C Y,LAI J,et al.Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures[J].Applied Physics Letters,2009,94(2):024103-1-024103-3.
[18]GU Y J,LU J,GROTJOHN T,et al.Microwave plasma reactor design for high pressure and high power density diamond synthesis[J].Diamond and Related Materials,2012,24(4):210-214.
[19]NAD S,GU Y J,ASMUSSEN J.Growth strategies for large and high quality single crystal diamond substrates[J].Diamond and Related Material,2015,60(11):26-34.
[20]MA Z B,WU C,WANG J H,et al.Development of a plate to plate MPCVD reactor configuration for diamond synthesis[J].Diamond and Related Materials,2016,66(6):135-140.
[21]YAMADA H,CHAYAHARA A,OHMAGARI S,et al.Factors to control uniformity of single crystal diamond growth by using microwave plasma CVD[J].Diamond&Related Materials,2016,63(3):17-20.
[22]付方彬.MPCVD生长半导体金刚石材料的研究现状[J].微纳电子技术,2016,53(9):571-578.
[23]MOKUNO Y,CHAYAHARA A,YAMADA H,et al.Improving purity and size of single-crystal diamond plates produced by high-rate CVD growth and lift-off process using ion implantation[J].Diamond and Related Materials,2009,18(10):1258-1261.
[24]YAMADA H,CHAYAHARA A,MOKUNO Y,et al.Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond[J].Diamond and Related Materials,2013,33(3):27-31.
[25]YAMADA H,CHAYAHARA A,MOKUNO Y,et al.A2-inch mosaic wafer made of a single-crystal diamond[J].Applied Physics Letters,2014,104(10):102110-1-102110-4.
[26]MUCHNIKOV A B,RADISHEV D B,VIKHAREV A L,et al.Characterization of interfaces in mosaic CVD diamond crystal[J].Journal of Crystal Growth,2016,442:62-67.
[27]王占国,郑有炓.半导体材料研究进展[M].北京:高等教育出版社,2012:572-590.
[28]WERNER M,DORSCH O,BAERWIND H U,et al.Charge transport in heavily B-doped polycrystalline diamond films[J].Applied Physics Letters,1994,64(5):595-597.
[29]SATO H,TOMOKAGE H,KIYOTA H,et al.Transient current measurements after applying the electronbeam pulse on boron-doped homoepitaxial diamond films[J].Diamond and Related Materials,1998,7(8):1167-1171.
[30]YAMANAKA S,TAKEUCHI D,WATANABE H,et al.Low-compensated boron-doped homoepitaxial diamond films using trimethylboron[J].Physica Status Solidi:A,1999,174(1):59-64.
[31]MORTET V,PERNOT J,JOMARD F,et al.Properties of boron-doped epitaxial diamond layers grown on(110)oriented single crystal substrates[J].Diamond and Related Materials.2015,53(3):29-34.
[32]TAKANO Y,NAGAO M,SAKAGUCHI I.Superconductivity in diamond thin films well above liquid helium temperature[J].Applied Physics Letters,2004,85(14):2851-2852.
[33]MURANAKA T,KOBASHI K,OKABE H,et al.Superconductivity in heavily B-doped diamond layers deposition on highly oriented diamond films[J].Diamond and Related Materials,2011,20(9):1273-1281.
[34]EKIMOV E A,SIDOROV V A,ZOTEEV A,et al.Super conductivity in diamond induced by boron doping at high pressure[J].Physica Status Solidi:B,2009,246(3):667-672.
[35]龚春生,李尚升,张贺.p型和n型金刚石薄膜的研究进展[J].材料导报,2016,30(9):36-40.
[36]SAADA D,ADLER J,KALISH R.Sulfur:apotential donor in diamond[J].Applied Physics Letters,2000,77(6):878-879.
[37]NAKAZAWA K,TACHIKI M,KAWARADA H,et al.Cathodoluminescence and Hall-effect measurements in sulfurdoped chemical-vapor-deposited diamond[J].Applied Physics Letters,2003,82(13):2074-2076.
[38]NASSAU K,NASSAU J.The history and present status of synthetic diamond[J].Journal of Crystal Growth,1979,4(2):157-172.
[39]GROTJOHN T A,TRAN D T,YARAN M K,et al.Heavy phosphorus doping by epitaxial growth on the(111)diamond surface[J].Diamond and Related Materials,2014,44:129-133.
[40]KOIZUMI S,KAMO M,SATO Y,et al.Growth and characterization of phosphorous doped(111)homoepitaxial diamond thin films[J].Applied Physics Letters,1997,71(2):1065-1067.
[41]KATO H,YAMASAKI S,OKUSHI H.n-type doping of(001)-oriented single-crystalline diamond by phosphorus[J].Applied Physics Letters,2005,86(22):222111-1-222111-3.
[42]PINAULT-THAURY M A,BERINI B,STENGER I,et al.High fraction of substitutional phosphorus in a(100)diamond epilayer with low surface roughness[J].Applied Physics Letters,2012,100(19):192109-1-192109-4.
[43]KATO H,OGURA M,MAKINO T,et al.n-type control of single-crystal diamond films by ultra-lightly phosphorus doping[J].Applied Physics Letters,2016,109(14):142102-1-142102-4.
[44]KATO H,MAKINO T,YAMASAKI S,et al.n-type diamond growth by phosphorus doping on(001)-oriented surface[J].Applied Physics Letters,2007,40(20):6189-6200.
[45]SAITO T,KAMETA M,KUSAKABE K,et al.Morphology and semiconducting properties of homoepitaxially grown phosphorus-doped(100)and(111)diamond films by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source[J].Journal of Crystal Growth,1998,191(4):723-733.
[46]胡晓君.金刚石薄膜的n型掺杂-分子动力学模拟和实验研究[D].上海:上海交通大学,2003.
[47]DANNEFAER C,ZHU W,BRETAGNON T,et al.Vacancies in polycrystalline diamond films[J].Physical Review:B,1996,53(4):1979-1984.
[48]刘向红.n型掺杂金刚石的第一性原理研究[D].济南:山东大学,2011.
[49]HARTMANN P,HAUBNER R,LUX B.Effects of simultaneous boron and nitrogen addition on hot-filament CVD diamond growth[J].Diamond and Related Materials,1997,6(2/3/4):456-462.
[50]SUN S S,JIA X P,ZHANG Z F,et al.HPHT synthesis of boron and nitrogen co-doped strip-shaped diamond using powder catalyst with additive h-BN[J].Journal of Crystal Growth,2013,377:22-27.
[51]SUN S S,CUI W,JIA X P,et al.The synthesis of“BCN”diamond materials with different B/N additives under high pressure and high temperature[J].Journal of Refractory Metals and Hard Materials,2016,59(5):56-60.
[52]FARRER R G.On the substitutional nitrogen donor in diamond[J].Solid State Communications,1969,7(9):685-688.
[53]KOIZUMI S,KAMO M,SATO Y,et al.Growth and characterization of phosphorus doped n-type diamond thin films[J].Diamond and Related Materials,1998,7(2/3/4/5):540-544.
[54]CAO G Z,DRRIESSEN F A J M,BAUHUIS G J,et al.Homoepitaxial diamond films codoped with phosphorus and nitrogen by chemical-vapor deposition[J].Journal of Applied Physics,1995,78(5):3125-3131.
[55]CAO G Z,GILING L J,ALKEMADE P F A.Growth of phosphorus and nitrogen co-doped diamond films[J].Diamond and Related Materials,1995,4(5/6):775-779.
[56]YAN B M,JIA X P,FANG C.The effect of phosphorus and nitrogen co-doped on the synthesis of diamond at high pressure and high temperature[J].Journal of Refractory Matals and Hard Materials,2016,54(8):309-314.
[57]李荣斌.共掺杂n型CVD金刚石薄膜的结构和性能[J].功能材料与器件学报,2007,13(4):330-338.
[58]BREZEANU M,BUTLER M,RUPESINGHE N L.Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes[J].Diamond and Related Materials,2007,16(4/5/6/7):1020-1024.
[59]GEIS M W,RATHMAN D D,EHRLICH D J,et al.Hightemperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond[J].IEEE Electron Device Letters,1987,8(8):341-343.
[60]KOHN E,ADAMSCHIK P,GLUCHE M.Diamond MEMS—a new emerging technology[J].Diamond and Related Materials,1999,8(2/3/4/5):934-940.
[61]UMEZAWA H,TATSUMI N,SHIKATA S I,et al.Increase in reverse operation limit by barrier height control of diamond schottky barrier diode[J].IEEE Electron Device Letters,2009,30(9):960-962.
[62]KUKUSHKIN V A.Simulation of a perfect CVD diamond Schottky diode steep forward current-voltage characteristic[J].Physica:B,2016,498:1-6.
[63]POLYAKOV A,SMIRNOV N,TARELKIN S,et al.Electrical properties of diamond platinum vertical Schottky barrier diodes[J].Materials Today:Proceedings,2016,3(2):S159-S164.
[64]KOHN E,ADAMSCHIK M,SCHMID P,et al.Prospects of diamond devices[J].Applied Physics Letters,2001,34(16):77-85.
[65]LIU J W,OHSATO H,WANG X,et al.Design and fabrication of high-perormance diamond triple-gate field-effect transistors[J].Scientific Reports,2016,6:34757-1-34757-7.
[66]CHICOT G,EON D,ROUGER N.Optimal drift region for diamond power devices[J].Diamond and Related Materials,2016,69:68-73.
[67]BALDUCCI A,DE S A,MARINELLI M,et al.Extreme UV single crystal diamond photodetectors by chemical vapor deposition[J].Diamond and Related Materials,2005,14(11/12):1980-1983.
[68]LAGOMARSINO S,BELLINI M,CORSI C,et al.Radiation hardness of three-dimensional polycrystalline diamond detectors[J].Applied Physics Letters,2015,106(19):193509-1-193509-4.
[69]MAKINO T,YOSHINO K,SAKAI N,et al.Enhancement in emission effciency of diamond deep-ultraviolet light emitting diode[J].Applied Physics Letters.2011,99(6):061110-1-061110-3.
[70]LI F N,ZHANG J W,WANG X L,et al.Deep-ultraviolet detectors based on oxygen-/fluorine-terminated(110)diamond[J].Superlattices and Microstructures,2016,100:258-265.
[71]SHOULDERS K R.Microelectronics using electron-beam-activated machining techniques[J].Advances in Computers,1961,2:135-293.
[72]KANG W P,DAVIDSON J L,WONG Y M.Diamond vacuum field emission devices[J].Diamond and Related Materials,2004,13(4/5/6/7/8):975-981.
[73]SUBRAMANIAN K,KANG W P,DAVIDSON J L.Nanodiamond lateral field emitter devices on thick insulator substrates for reliable high power applications[J].Diamond and Related Materials,2008,17(4/5):786-789.
[74]刘巧平,杨延宁,张富春,等.纳米金刚石场发射阴极制备及性能研究[J].人工晶体学报,2016,45(7):1976-1979.
[75]UMEZAWA H,NAGASE M,KATO Y,et al.High temperature application of diamond power device[J].Diamond and Related Materials,2012,24(1):201-205.
[76]IKEDA K,UMEZAWA H,SHIKATA S.Edge termination techniques for p-type diamond Schottky barrier diodes[J].Diamond and Related Materials,2008,17(4/5):809-812.
基本信息:
DOI：10.13250/j.cnki.wndz.2017.04.001
中图分类号:TN304.18
引用信息:
[1]陈亚男,张烨,郁万成,等.金刚石半导体材料和器件的研究现状[J].微纳电子技术,2017,54(04):217-228.DOI:10.13250/j.cnki.wndz.2017.04.001.
基金信息:
国家高技术研究发展计划(863计划)资助项目(2014AA052401);; 北京市科技计划项目(D16110300430000);; 国网科技项目(5455DW150013)
2017-03-14
2017-03-14
2017-03-14