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为了提升n型叉指背接触(IBC)太阳电池的光电转换效率，采用激光接触开孔技术在电池上形成接触区域，然后印刷银浆烧结形成电极。研究了不同激光开孔图形对IBC电池电极接触电阻和金属复合的影响。制备了相应的IBC电池以对比电性能。实验结果表明，采用的圆点开孔图形的面积占比在30%时，电池发射极和背表面场的接触电阻分别为2.09和1.62Ω·cm2,金属接触暗饱和电流密度分别为692.5和1 416.1 fA/cm2,制备的IBC电池最高光电转换效率达到24.30%,平均光电转换效率达到24.20%,对应的短路电流为11.808 A,开路电压为0.697 V,填充因子为80.61%。
Abstract：To improve the photoelectric conversion efficiency of n-type interdigitated back contact(IBC) solar cells, laser contact opening technology was adopted to form contact areas, then silver paste was printed and sintered to form electrodes. The effects of different laser opening patterns on electrode contact resistance and metal recombination of IBC cells were studied. The corresponding IBC cells were prepared to compare the electrical properties. The experimental results show that when the area ratio of the dot opening pattern is 30%, the contact resistances of emitter and back surface field of the cells are 2.09 and 1.62 Ω·cm2, and the metal contact dark saturation current density are 692.5 and 1 416.1 fA/cm2, respectively. The highest photoelectric conversion efficiency of the prepared IBC cells reaches 24.30%, the average photoelectric conversion efficiency reaches 24.20%, the corresponding short-circuit current is 11.808 A, the open-circuit voltage is 0.697 V and fill factor is 80.61%.
[1] SCHWARTZ R J,LAMMERT M D.Silicon solar cells for high concentration applications[C]// Proceedings of International Electron Devices Meeting.Washington,USA,1975:350-352.
[2] KHO T C,FONG K C,STOCKS M,et al.Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell[J].Progress in Photovoltaics:Research and Applications,2020,28(10):1034-1044.
[3] YOSHIKAWA K,YOSHIDA W,IRIE T,et al.Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology[J].Solar Energy Materials and Solar Cells,2017,173:37-42.
[4] XU G C,DENG M Z,CHEN S,et al.25% cell efficiency with integration of passivating contact technology and interdigitated back contact structure on 6" wafers[C]// Proceedings of the 46th Photovoltaic Specialists Conference (PVSC).Chicago,USA,2019:1452-1455.
[5] HOLLEMANN C,HAASE F,SCH?FER S,et al.26.1%-efficient POLO-IBC cells:quantification of electrical and optical loss mechanisms[J].Progress in Photovoltaics:Research and Applications,2019,27(11):950-958.
[6] SMITH D D,COUSINS P,WESTERBERG S,et al.Toward the practical limits of silicon solar cells[J].IEEE Journal of Photovoltaics,2014,4(6):1465-1469.
[7] 屈小勇，高嘉庆，郭永刚，等.n型IBC太阳电池磷掺杂工艺[J].微纳电子技术，2022,59(3):278-283.
[8] HAASE F,HOLLEMANN C,SCH?FER S,et al.Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells[J].Solar Energy Materials and Solar Cells,2018,186:184-193.
[9] DAHLINGER M,CARSTENS K,HOFFMANN E,et al.23.2% efficiency with laser processed IBC solar cells[C]// Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition.Hamburg,Germany,2015:1-3.
[10] 庞恒强，周雨，贺茂双，等.背面局域点接触对PERC太阳电池性能的影响[J].太阳能，2020(10):43-52.
[11] 王竞争.单晶硅PERC电池工艺分析与研究[D].苏州：苏州大学，2019.
[12] CHAUDHARY A,HO? J,LOSSEN J,et al.Advancement in screen printed fire through silver paste metallisation of polysilicon based passivating contacts[J].AIP Confe-rence Proceedings,2367(1):020003-1-020003-7.
[13] SHOCKLEY W.Research and investigation of inverse epitaxial UHF power transistors[R].Air Force Atomic Laboratory,Wright Patterson Air Force Base,Ohio,Rep.Al-TOR-207,1964.
[14] 陈筑，徐林.晶体硅太阳电池接触电阻测量方法[J].太阳能学报，2014,35(5):750-755.
[15] REEVES G K,HARRRISON H B.Obtaining the specific contact resistance from transmission line model measurement [J].IEEE Electron Device Letters,1982,3(5):111-113.
[16] SINTON R A,CUEVAS A.Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data[J].Applied Physics Letters,1996,69 (17):2510-2512.
[17] 周春兰，王文静.晶体硅太阳能电池少子寿命测试方法[J].中国测试技术，2007(6):25-31.
[18] SINTON R A,CUEVAS A.Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data[J].Applied Physics Letters,1996,69(17):2510-2512.
[19] KANE D E,SWANSON R M.Measurement of the emitter saturation current by a contactless photoconductivity decay method [C]// Proceedings of the 18th IEEE photovoltaic Specialists Conference.Las Vegas,USA,1985:578-583.
[20] INNS D,POPLAVSKYY D.Measurement of metal induced recombination in solar cells[C]// Proceedings of the 42nd Photovoltaic Specialist Conference.New Orleans,USA,2015:1-4.
基本信息:
DOI：10.13250/j.cnki.wndz.2022.12.020
中图分类号:TM914.4
引用信息:
[1]吴翔,高嘉庆,郭永刚,等.n型IBC太阳电池金属化工艺研究[J].微纳电子技术,2022,59(12):1388-1394.DOI:10.13250/j.cnki.wndz.2022.12.020.
2022-12-15
2022-12-15