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阐述了氮化镓高电子迁移率晶体管(GaN HEMT)在电力电子和卫星通信领域的应用优势，并从材料生长、器件结构和性能提升的角度梳理了近年国内外的发展现状。针对GaN HEMT功率器件在复杂空间环境下面临的辐射损伤问题，重点归纳了γ射线辐射、中子辐射、质子辐射及重离子辐射引起GaN HEMT功率器件电学性能的退化规律，并总结了GaN HEMT功率器件在这些粒子辐射下产生的总剂量效应、位移损伤效应和单粒子效应等内在损伤机制。最后，指出目前GaN HEMT功率器件辐射效应研究存在的不足，并对GaN HEMT功率器件辐射效应未来的研究方向和抗辐射加固思路进行了展望。
Abstract：The advantages of gallium nitride high electron mobility transistors(GaN HEMTs) applied in the field of power electronics and satellite communication are briefly described, and the development status at home and abroad in recent years is reviewed from the perspectives of material growth, device structure and performance improvement. In addition, aiming at the radiation damage faced by GaN HEMT power devices in complex space environment, the degradation laws of the electrical performance of GaN HEMT power devices caused by gamma radiation, neutron radiation, proton radiation and heavy ion radiation are summarized. The internal damage mechanisms of GaN HEMT power devices of total ionizing dose effect, displacement damage effect and single event effect induced by the particle radiation are summarized. Finally, the shortcomings of the current research on radiation effects of GaN HEMT power devices are pointed out, and the future research direction and ideas for radiation hardening of GaN HEMT power devices are prospected.
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基本信息:
DOI：10.13250/j.cnki.wndz.24120102
中图分类号:TN386
引用信息:
[1]邱一武,王安晨,殷亚楠,等.GaN HEMT功率器件及辐射效应研究进展[J].微纳电子技术,2024,61(12):22-33.DOI:10.13250/j.cnki.wndz.24120102.
2024-10-09
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2024-10-31
2024-10-31
2024-10-31