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为满足通信高频、宽带、高线性度的要求,采用模拟预失真技术设计并实现了一款内置线性化器的K波段功率放大器。该功率放大器基于90 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计,采用三级放大的拓扑结构,其中第一级采用自偏置结构来降低电流,同时每一级漏极都使用二级滤波来滤除杂波信号。线性化器的核心器件未使用传统的肖特基二极管,而是由一对并联的冷模PHEMT、一个电阻和一个旁路电容组成。通过设计、仿真和流片,最终得到一款工作在17～21 GHz的高线性功率放大器,在饱和输出功率回退3 dBm时,三阶交调失真(IMD3)最大可改善10 dBc。
Abstract：To meet requirments of high-frequency, wide-bandwidth and high-linearity in communication, a K-band power amplifier with an built-in linearizer was designed and implemented using analog predistortion technique. The power amplifier was designed based on a 90 nm GaAs pseudomorphic high electron mobility transistor(PHEMT) process which employing a three-stage amplification topology. The first stage utilizes a self-biased structure to reduce current, while each stage incorporates a two-stage filtering at the drain to eliminate spurious signals. Instead of employing conventional Schottky diodes as core components, the linearizer utilizes a pair of cold-mode PHEMTs in parallel, along with one resistor and one bypass capacitor. A highly linear power amplifier operating at 17-21 GHz was ultimately achieved through design, simulation, and tape-out. At a 3 dBm back-off from saturated output power, the third-order intermodulation distortion(IMD3) can be improved by up to 10 dBc.
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基本信息:
DOI：10.13250/j.cnki.wndz.26030202
中图分类号:TN722.75
引用信息:
[1]李宇杰,秦海潮,周彪.K波段线性化器的研究[J].微纳电子技术,2026,63(03):80-87.DOI:10.13250/j.cnki.wndz.26030202.
2025-12-02
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2026-01-07
2026
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2026-03-11
2026-03-11