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首先论述了Al GaN/GaN高电子迁移率晶体管(HEMT)在微波大功率领域的应用优势和潜力;其次,介绍并分析了影响Al GaN/GaN HEMT性能的主要参数,分析表明要提高Al-GaN/GaN HEMT的频率和功率性能,需改善寄生电阻、电容、栅长和击穿电压等参数。然后,着重从材料结构和器件工艺的角度阐述了近年来Al GaN/GaN HEMT的研究进展,详细归纳了目前主要的材料生长和器件制作工艺,可以看出基本的工艺思路是尽量提高材料二维电子气的浓度和材料对二维电子气的限制能力的同时减小器件的寄生电容和电阻,增强栅极对沟道的控制能力。另外,根据具体情况调节栅长及沟道电场。最后,简要探讨了Al GaN/GaN HEMT还存在的问题以及面临的挑战。
Abstract：The application advantages and the great potential of AlGaN/GaN high electron mobi-lity transistors(HEMTs)in the high power microwave field are introduced firstly.The major parameters affecting the performance of the AlGaN/GaN HEMT are analyzed,from which it can be seen that the main parameters,such as the parasitic resistance,parasitic capacitance,gate length,breakdown voltage and other parameters,must be enhanced in order to improve the performance of the device.And then the latest research progress on the process of AlGaN/GaN HEMTs is reviewed in detail with focus on material structures and device technologies,and the major material growth and device fabrication technology are summed up comprehensively.The discussion indicates that the basic idea of the fabrication is increasing the density of the two-dimensional electron gas(2DEG)and the limiting capability of the material on the 2DEG as far as possible,meanwhile,trying to reduce the parasitic resistance and parasitic capacitance,and enhance the control capability of the gate over the channel.In addition,the gate length and channel electric field are adjusted according to the specific circumstances.Finally,the problems and challenges for the development of the device are discussed briefly.
[1]OKAMOTO Y,ANDO Y,HATAYA K,et al.Improved power performance for a recessed-gate Al GaN-GaN hetero-junction FET with a field-modulating plate[J].IEEE Tran-sactions on Microwave Theory and Techniques,2004,52(11):2536-2540.
[2]WU Y F,MOORE M,SAXLER A,et al.40-W/mm dou-ble field-plated GaN HEMTs[C]//Proceedings of Device Research Conference.State College,USA,2006:151-152.
[3]HIGASHI WAKI M,MI MURA T,MATSUI T,et al.AlGaN/GaN heterostructure field-effect transistors on4H-SiC substrates with current-gain cutoff frequency of190GHz[J].Applied Physics Express,2008,1(2):21103-21105.
[4]CHUNGJ W,HOKE WE,CHUMBES E M,et al.AlGaN/GaN HEMT with300-GHzfmax[J].IEEE Electron Device Let-ters,2010,31(3):195-197.
[5]SZE S M,NG K K.Physics of semiconductor devices[M].New York:Wiley-Blackwell,2007:395-396.
[6]KULIEV A,KUMAR V,SCHWI NDT R,et al.0.15μm gate-length Al GaN/GaN HEMTs with varying gate recess length[J].Solid-State Electronics,2003,47(1):117-122.
[7]VETURY R,ZHANG N Q Q,KELLER S,et al.The im-pact of surface states on the DC and RF characteristics of A1GaN/GaN HFETs[J].IEEE Transactions on Electron Devices,2001,48(3):560-566.
[8]SHEN L,HEIKMAN S,MORAN B,et al.Al GaN/Al N/GaN high-power microwave HEMT[J].IEEE Electron De-vice Letters,2001,22(10):457-459.
[9]PALACIOS T,CHAKRABORTY A,HEIKMAN S,et al.Al GaN/GaN high electron mobility transistors with InGaN back-barriers[J].IEEE Electron Device Letters,2006,27(1):13-15.
[10]HIGASHI WAKI M,MATSUI T,MI MURA T,et al.Al GaN/GaN MIS HFETs withfTof163GHz using Cat-CVD Si N gate-insulating and passivation layers[J].IEEE Elec-tron Device Letters,2006,27(1):16-18.
[11]WANG W K,LI N P C,LI N C H,et al.Performance en-hancement by using the n+-GaN cap layer and gate recess technology on the Al GaN-GaNHEMTfabrication[J].IEEE Electron Device Letters,2005,26(1):5-7.
[12]COFFIE R,BUTTARI D,HEIKMAN S,et al.p-capped GaN-Al GaN-GaN high-electron mobility transistors(HEMTs)[J].IEEE Electron Device Letters,2002,23(10):588-590.
[13]SHEN L,COFFIE R,BUTTARI D,et al.High-power polarization-engineered GaN/Al GaN/GaN HEMTs without surface passivation[J].IEEE Electron Device Letters,2004,25(1):7-9.
[14]NAKAZAWA S,UEDA T,I NOUE K,et al.Recessed-gate Al GaN/GaN HFETs with lattice-matched InAl GaN quaternary alloy capping layers[J].IEEE Transactions on Electron Devices,2005,52(10):2124-2128.
[15]MURATA T,HIKITA M,HIROSE Y,et al.Source resis-tance reduction of Al GaN-GaN HFETs with novel superlat-tice caplayer[J].IEEE Transactions on Electron Devices,2005,52(6):1042-1047.
[16]GREEN B M,CHU K K,CHUMBES E M,et al.The effect of surface passivation on the microwave characteristics of un-doped Al GaN/GaN HEMT's[J].IEEE Electron Device Letters,2000,21(6):268-270.
[17]HAMPSON M D,SHEN S C,SCHWINDT R S,et al.Po-lyimide passivated Al GaN-GaN HFETs with7.65W/mm at18GHz[J].IEEE Electron Device Letters,2004,25(5):238-240.
[18]WANG WK,LI NC H,LI NP C,et al.Low-kBCB passi-vation on Al GaN-GaN HEMT fabrication[J].IEEE Elec-tron Device Letters,2004,25(12):763-765.
[19]LEE J H,YOON HS,PARK C S,et al.Ultra-low noise characteristics of Al GaAs/InGaAs/GaAs pseudomorphic HEMTs with wide head T-shaped gate[J].IEEE Electron Device Letters,1995,16(6):271-273.
[20]BENTLEY S,LI X,MORAN D AJ,et al.Two methods of realising10nm T-gate lithography[J].Microelectronic Engineering,2009,86(4/5/6):1067-1070.
[21]PALACIOS T,DORA Y,CHAKRABORTY A,et al.Opti-mization of Al GaN/GaN HEMTs for high frequency opera-tion[J].Physica Status Solidi:A,2006,203(7):1845-1850.
[22]ANDO Y,OKAMOTO Y,MIYAMOTO H,et al.10-W/mm Al GaN-GaN HFET with a field modulating plate[J].IEEE Electron Device Letters,2003,24(5):289-291.
[23]CHINI A,BUTTARI D,COFFIE R,et al.12W/mmpower density Al GaN/GaN HEMTs on sapphire substrate[J].Electronics Letters,2004,40(1):73-74.
[24]AWANO Y,KOSUGI M,KOSEMURA K,et al.Short-channel effects in subquarter-micrometer-gate HEMTs:si-mulation and experiment[J].IEEE Transactions on Elec-tron Devices,1989,36(10):2260-2266.
[25]EGAWA T,ZHAO G Y,ISHIKAWA H,et al.Charac-terizations of recessed gate Al GaN/GaN HEMTs on sapphire[J].IEEE Transactions on Electron Devices,2001,48(3):603-608.
[26]SUEMITSUT,ENOKI T,YOKOYAMA H,et al.Improved recessed-gate structure for sub-0.1-mum-gate InP-based high electron mobility transistors[J].Japanese Journal of Applied Physics:Part1,1998,37(3B):1365-1372.
[27]READI NGER E D,MOHNEY S E,PRIBICKO T G,et al.Ohmic contacts to Al-rich n-Al GaN[J].Electronics Letters,2002,38(20):1230-1231.
[28]CHUNGJ W,PINER E,PALACIOS T,et al.N-face GaN/AlGaNtransistors through substrate removal[C]//Pro-ceedings of the66thAnnual Device Research Conference(DRC).Santa Barbara,USA,2008:199-200.
[29]KUMAR V,ZHOU L,SELVANATHAN D,et al.Ther-mally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN[J].Journal of Applied Physics,2002,92(3):1712-1714.
[30]LUO B,KI MJ,REN F,et al.Electrical characteristics of proton-irradiated Sc2O3passivated Al GaN/GaN high electron mobility transistors[J].Applied Physics Letters,2003,82(9):1428-1430.
[31]ANDO Y,WAKEJI MA A,OKAMOTO Y,et al.Novel Al GaN/GaNdual-field-plate FET with high gain,increased linearity and stability[C]//Proceedings of IEEE Interna-tional Electron Devices Meeting.New York,USA,2005:585-588.
[32]FENG Q,LI L M,HAO Y,et al.The improvement of ohmic contact of Ti/Al/Ni/Au to Al GaN/GaN HEMT by multi-step annealing method[J].Solid-State Electronics,2009,53(9):955-958.
基本信息:
中图分类号:TN386.3
引用信息:
[1]颜伟,韩伟华,张仁平,等.AlGaN/GaN HEMT器件工艺的研究进展[J].微纳电子技术,2011,48(02):79-86.
基金信息:
国家重点基础研究发展计划(973计划)资助项目(2010CB934104)
2011-02-15
2011-02-15