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硅通孔(TSV)能够实现信号的垂直传输,是微系统三维集成中的关键技术,在微波毫米波领域,硅通孔的高频传输特性成为研究的重点。针对微系统三维集成中,无源集成的硅基转接板的空心TSV垂直传输结构低损耗的传输要求,进行硅通孔的互连设计和传输性能分析。采用传输线校准方式,首先在硅基转接板上设计TSV阵列接地的共面波导(CPW)传输线和带TSV过孔的传输结构,并分别进行仿真分析,计算得出带TSV过孔的传输结构的插入损耗;然后通过后道TSV工艺,在硅基转接板上制作传输线和带TSV过孔的传输结构,用矢量网络分析仪法测试传输线和带TSV过孔的传输结构的插入损耗;最后计算得到单个TSV过孔的插入损耗,结果显示在0.1～30 GHz频段内其插入损耗S21≤0.1 dB,实现了基于TSV的低损耗信号传输。
Abstract：The through silicon via(TSV)can realize signal vertical transmission,which is the key technology of 3 D integration for microsystems.In the field of microwave and millimeter wave,high frequency transmission performance of the TSV becomes the research focus.In order to meet the low loss transmission requirements of the hollow TSV vertical transmission structure in the silicon interposer with integrated passive devices for the microsystem3 D integration,the interconnection design and transmission performance analysis of the TSV were carried out.By using the calibration method of the transmission line,the TSV array grounded coplanar waveguide(CPW)transmission line and transmission structure with TSVs were designed firstly on the silicon interposer,and the simulation analyses were carried out respectively to calculate the insertion loss of the transmission structure with TSVs.Then the transmission line and transmission structure with TSVs were made on the silicon interposer by the TSV via-last process,and the insertion loss of the transmission line and transmission structure with TSVs were measured by using the vector network analyzer method.Finally,the insertion loss of the single TSV was calculated.The result shows that the insertion loss S21≤0.1 dB within the frequency band of 0.1-30 GHz,indicating that the low insertion loss of the signal transmission based on the TSV is realized.
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基本信息:
DOI：10.13250/j.cnki.wndz.2019.12.009
中图分类号:TN811
引用信息:
[1]郭育华,王强文,甘雨辰,等.空心硅通孔的设计及其传输性能[J].微纳电子技术,2019,56(12):999-1004+1009.DOI:10.13250/j.cnki.wndz.2019.12.009.
基金信息:
装备预先研究项目(41423070115)
2019-11-21
2019-11-21