| 72 | 0 | 9 |
| 下载次数 | 被引频次 | 阅读次数 |
本文对异质结双极晶体管(HBT)电压比较器进行了理论分析,设计并制作了国内第一个AlGaAs/GaAs HBT电压比较器电路。首先,分析了HBT的基本工作原理;然后比较详细地分析了ECL电压比较器的工作原理并进行了设计。随后介绍了HBT的E-M模型,提取了模型参数,并对电路进行了模拟;最后全面介绍了AlGaAs/GaAs HBT电压比较器的制作过程。测试结果表明,HBT器件直流电流增益大于100,fT为15.2GHz,fmax为14.8GHz;电路具有取样和锁存能力,并具有电压比较器的初步功能。
Abstract：A voltage comparator implemented with AlGaAs/GaAs heterojunction bipolar transistors is reported in this paper. At first, the DC and AC characteristics of the HBT were studied theoretically. Then a voltage comparator was designed. The E-M model was extended and the parameters used in this model were extracted. The performance of the HBT voltage comparator was simulated. At last, a AlGaAs/GaAs HBT voltage comparator was fabricated and tested. The test results showed that the current gain is greater than 100 with fT of 15.2 GHz and fmax of 14.8 GHz. The initial function of the voltage comparator was observed. HBT, Voltage comparator
基本信息:
DOI：10.13250/j.cnki.wndz.1993.03.003
引用信息:
[1]焦智贤,曾庆明.AlGaAs/GaAs HBT电压比较器[J].半导体情报,1993(03):19-29.DOI:10.13250/j.cnki.wndz.1993.03.003.
1993-04-01
1993-04-01