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传统的紫外纳米压印(UV-NIL)虽然不受曝光波长的限制,但是存在气泡残留、压印不均匀、模具寿命短等问题。为解决这些问题产生了各种新型UV-NIL工艺,针对这些工艺阐述了紫外纳米压印技术工艺要素的最新研究进展,包括模具、光刻胶的材料与制备技术的现状,并列举了步进-闪光压印光刻(S-FIL)、卷对卷式紫外纳米压印光刻(R2R-NIL)等工艺的流程及其特点。紫外纳米压印的图形质量目前仍受光刻胶填充、固化、脱模等物理行为影响。结合最近的实验研究,从理论方面概述了紫外纳米压印的基本原理,主要指出了光刻胶流动行为以及模具降解等问题。最后介绍了一些紫外纳米压印技术的尖端应用。
Abstract：Although the traditional UV nanoimprint lithography(UV-NIL)is not limited by the exposure wavelength,it still has many problems,such as the residual bubble,nonuniform imprint pattern and short lifetime of the mould.Several novel UV-NIL processes are developed to solve the problems.According to these processes,the recent research progress of process factors for the UV-NIL technology are described,including materials and current fabrication processes of moulds and resists,and the processes and characteristics of the step and flash imprint lithography(S-FIL),UV roll-to-roll nanoimprint lithography(R2R-NIL)and so on are listed.The pattern quality of the UV-NIL is influenced by physical behaviors of the resist filling,curing and demoulding.Based on the recent experimental studies,the basic principle of the UV-NIL is overviewed theoretically,and the problems of the resist flow and mould degradation are mainly indicated.Finally,some cutting-edge applications of the UV-NIL are briefly introduced.
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基本信息:
DOI：10.13250/j.cnki.wndz.2017.05.010
中图分类号:TN23
引用信息:
[1]殷敏琪,孙洪文,王海滨.紫外纳米压印技术的研究进展[J].微纳电子技术,2017,54(05):347-354.DOI:10.13250/j.cnki.wndz.2017.05.010.
基金信息:
中央高校基本科研业务费专项资金资助项目(2015B22514)
2017-04-10
2017-04-10
2017-04-10