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研究了微波功率和反应腔室压强对微波等离子体化学气相沉积(MPCVD)法生长AlN薄膜质量的影响。采用高温MPCVD法，以N2为氮源，三甲基铝(TMAl)为铝源，在6H-SiC衬底上进行AlN薄膜的外延生长。在不同微波功率和不同反应腔室压强下，外延生长了AlN薄膜样品。生长样品的测试结果表明，在微波功率为4 500 W时，样品(002)面X射线摇摆曲线(XRC)半高全宽(FWHM)为217 arcsec。在反应腔室压强为130 Torr(1 Torr=133.3 Pa)时，样品(002)面XRC的FWHM为216 arcsec。该研究将为以后AlN材料的MPCVD生长提供一些参考。
Abstract：The effects of microwave power and reaction chamber pressure on the quality of AlN thin films grown by microwave plasma chemical vapor deposition(MPCVD) method were investigated. By using high temperature MPCVD method, with N2 as nitrogen source and trimethyl aluminum(TMAl) as aluminum source, the epitaxial growth of AlN thin film was carried out on 6H-SiC substrate. AlN thin film samples were epitaxially grown under different microwave powers and different reaction chamber pressures. Test results of the grown samples show that full width at half maximum(FWHM) of the(002) plane X-ray rocking curve(XRC) of the samples is 217 arcsec at a microwave power of 4 500 W. At a reaction chamber pressure of 130 Torr(1 Torr=133.3 Pa), the FWHM of the(002) plane XRC of the samples is 216 arcsec. The study will provide some reference for MPCVD growth of AlN materials in the future.
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基本信息:
DOI：10.13250/j.cnki.wndz.2023.04.018
中图分类号:TB383.2
引用信息:
[1]李嘉豪,丁广玉,韩军,等.微波功率和反应腔室压强对MPCVD生长AlN薄膜质量的影响[J].微纳电子技术,2023,60(04):626-632.DOI:10.13250/j.cnki.wndz.2023.04.018.
基金信息:
国家自然科学基金(61731019); 北京市自然科学基金(4202010)
2023-04-15
2023-04-15