| 1,073 | 8 | 105 |
| 下载次数 | 被引频次 | 阅读次数 |
对纳米铜在电子封装领域的应用优势进行了简要分析,从材料制备、烧结技术和材料性能三个方面回顾了纳米铜性能调控技术的最新研究成果,评述了还原性稳定剂、表面配位诱导深度晶面重构以及核壳结构等纳米铜抗氧化技术的工程应用价值,分析了低温无压热烧结以及大气环境下的光子烧结的发展趋势。从应用模式和性能的视角介绍了纳米铜在高可靠全铜互连、下一代功率芯片键合以及新兴的柔性混合电子(FHE)等方面的应用进展、面临的挑战及尚待开展的研究。最后展望了纳米铜在电子封装领域规模化应用的前景并指出重点研究方向。
Abstract：The application advantages of nano-copper in the field of electronic packaging are briefly analyzed. The latest research achievements of nano-copper performance control technology are reviewed from the aspects of material preparation, sintering technology and material properties. The engineering application values of nano-copper anti-oxidation technologies, such as reductive stabilizer, surface coordination induced deep lattice reconstruction and core-shell structure, are reviewed. The development trends of low-temperature pressureless thermal sintering and photo-nic sintering in atmospheric environment are analyzed. From the perspectives of application mode and performance, the application progresses, challenges and researches to be carried out for nano-copper in high-reliability all-copper interconnection, next-generation power die bonding and emerging flexible hybrid electronics(FHE) are introduced. Finally, the outlook of large-scale application of nano-copper in the field of electronic packaging is prospected and key research directions are pointed out.
[1] LI Y,GOYAL D.3D microelectronic packaging[M].2nd ed.Singapore:Springer,2021:347-367.
[2] LU J Q.3-D hyperintegration and packaging technologies for micro-nano systems[J].Proceedings of the IEEE,2009,97(1):18-30.
[3] SUGANUMA K.Wide bandgap power semiconductor packaging[M].Duxford:Woodhead Publishing,2018:112-113.
[4] 赵正平.超宽禁带半导体金刚石功率电子学研究的新进展(续)[J].半导体技术，2021,46(2):81-103.
[5] SHARIF A.Harshenvironment electronics[M].Weinheim:Wiley-VCH,2019:31-34.
[6] 李帅，白欣娇，袁凤坡，等.碳化硅功率模块焊接工艺研究进展[J].微纳电子技术，2020,57(2):163-168.
[7] KHAN Y,THIELENS A,MUIN S,et al.Anew frontier of printed electronics:flexible hybrid electronics[J].Advanced Materials,2020,32(15):1905279-1-1905279-29.
[8] 崔铮.柔性混合电子——基于印刷加工实现柔性电子制造[J].材料导报，2020,34(1):1009-1013.
[9] EJIRI Y,SUKATA S,TOBA M,et al.Cu paste for molded interconnect devices[C]// Proceedings of Pan Pacific Microelectronics Symposium (Pan Pacific).Kauai,HI,USA,2019:1-10.
[10] 张墅野，鲍天宇，修子扬，等.三维封装电迁移Cu互连线的多物理场模拟仿真[J].材料导报，2021,35(2):2133-2138.
[11] 伍艺龙，卢茜，董东.多芯片组件的导电胶银迁移失效预防措施[J].电子工艺技术，2018,39(3):136-139.
[12] CHEN T F,SIOW K S.Comparing the mechanical and thermal-electrical properties of sintered copper (Cu) and sintered silver (Ag)joints[J].Journal of Alloys and Compounds,2021,866:158783-1-158783-19.
[13] LI W L,SUN Q Q,LI L Y,et al.The rise of conductive copper inks:challenges and perspectives[J].Applied Materials Today,2020,18:100451-1-100451-26.
[14] 沈俊杰.基于铜纳米棒的低温互连工艺研究[D].武汉：华中科技大学，2017.
[15] 范吉磊.纳米银/铜的可控制备、低温烧结及其在微电子封装中的互连应用[D].深圳：中国科学院大学(中国科学院深圳先进技术研究院),2020.
[16] 孙磊，张文凤，王治华，等.铜纳米材料的制备及应用研究进展[J].河南大学学报(自然科学版),2012,42(3):258-266.
[17] HOKITA Y,KANZAKI M,SUGIYAMA T,et al.High-concentration synthesis of sub-10-nm copper nanoparticles for application to conductive nanoinks[J].ACS Applied Materials & Interfaces,2015,7(34):19382-19389.
[18] TOMOTOSHI D,KAWASAKI H.Surface and interface designs in copper-based conductive inks for printed/flexible electronics[J].Nanomaterials,2020,10(9):1689-1-1689-53.
[19] HUANG H J,WU X,ZHOU M B,et al.A highly reliable die bonding approach for high power devices by low tempe-rature pressureless sintering using a novel Cu nanoparticle paste[C]// Proceedings of the 70th IEEE Electronic Components and Technology Conference (ECTC).Orlando,FL,USA,2020:1697-1702.
[20] 迟聪聪，夏亮，王曌，等.丙三醇-水二元溶剂法抗氧化纳米铜的制备[J].包装工程，2020,41(13):131-138.
[21] MOU Y,PENG Y,LI J J,et al.Facile preparation of Cu micro-nano composite particle paste for low temperature bonding[C]// Proceedings of the 20th International Conference on Electronic Packaging Technology.Hong Kong,China,2019:245766-1-245766-4.
[22] PENG J,CHEN B L,WANG Z C,et al.Surface coordination layer passivates oxidation of copper[J].Nature,2020,586(7829):390-394.
[23] JI H J,ZHOU J B,LIANG M,et al.Ultra-low temperature sintering of Cu@Ag core-shell nanoparticle paste by ultrasonic in air for high-temperature power device packaging[J].Ultrasonics Sonochemistry,2018,41:375-381.
[24] del CARRO L,ZINN A A,RUCH P,et al.Oxide-free copper pastes for the attachment of large-area power devices[J].Journal of Electronic Materials,2019,48(10):6823-6834.
[25] 郝武昌，卢睿涵，刘振国，等.光子烧结纳米铜浆及其在柔性电子中的应用[J].电子工艺技术，2020,41(5):256-259.
[26] MOU Y,WANG H,PENG Y,et al.Enhanced heat dissipation of high-power light-emitting diodes by Cu nano-particle paste[J].IEEE Electron Device Letters,2019,40(6):949-952.
[27] HUANG H J,WU X,ZHOU M B,et al.Superior strength and strengthening mechanism of die attachment joints by using bimodal-sized Cu nanoparticle paste capable of low-temperaturepressureless sintering[J].Journal of Materials Science,2021,32(3):3391-3401.
[28] DAI X F,ZHANG T,SHI H B,et al.Reactive sintering of Cu nanoparticles at ambient conditions for printed electro-nics[J].ACS Omega,2020,5(22):13416-13423.
[29] 中国科学院苏州纳米技术与纳米仿生研究所.印刷电子墨水技术[EB/OL].[2021-02-17].http://perc-sinano.com/yjcg.asp.
[30] KUPRION.Kuprion's engineered copper materials[EB/OL].[2021-02-17].https://www.kuprioninc.com/electronics.
[31] ZINN A A,STOLTENBERG R M,CHANG J,et al.Nanocopper as a soldering alternative:solder-free assembly[C]// Proceedings of the 16th IEEE International Confe-rence on Nanotechnology (IEEE-NANO).Sendai,Japan,2016:367-370.
[32] KIM J,LEE B,KOO J M,et al.Copper nanoparticle paste on different metallic substrates for low temperature bonded interconnection[C]// Proceedings of the 19th IEEE Electronics Packaging Technology Conference (EPTC).Singapore,2017:1-4.
[33] del CARRO L,ZURCHER J,DRECHSLER U,et al.Low-temperature dip-based all-copper interconnects formed by pressure-assisted sintering of copper nanoparticles[J].IEEE Transactions on Components,Packaging and Manufacturing Technology,2019,9(8):1613-1622.
[34] ZüRCHER J,YU K,SCHLOTTIG G,et al.Nanoparticle assembly and sintering towards all-copper flip chip inter-connects[C]// Proceedings of the 65th IEEE Electronic Components and Technology Conference (ECTC).San Diego,CA,USA,2015:1115-1121.
[35] SOSA R A,MOHAN K,NGUYEN L,et al.Cupillar with nanocopper caps:the next interconnection node beyond traditional Cu pillar[C]// Proceedings of the 69th IEEE Electronic Components and Technology Conference (ECTC).Las Vegas,NV,USA,2019:655-660.
[36] AOKI T,NAKAMURA E,KOHARA S,et al.Plating-free bumping by Cu nanopaste and injection molded solder (IMS) for fine pitch flip chip joining[C]// Proceedings of the 70th IEEE Electronic Components and Technology Conference (ECTC).Orlando,FL,USA,2020:742-748.
[37] WU Z J,CAI J,WANG Q,et al.Low temperature Cu-Cu bonding using copper nanoparticles fabricated by high pressure PVD[J].AIP Advances,2017,7(3):35306-1-35306-6.
[38] WU Z J,WANG Q,SONG C M,et al.Low temperature fine-pitch wafer-level Cu-Cu bonding using nanoparticles fabricated by PVD[C]// Proceedings of the 68th IEEE Electronic Components and Technology Conference (ECTC).San Diego,CA,USA,2018:287-292.
[39] SHAHANE N,MOHAN K,BEHERA R,et al.Novelhigh-temperature,high-power handling all-Cu interconnections through low-temperature sintering of nanocopper foams[C]// Proceedings of the 66th IEEE Electronic Components and Technology Conference (ECTC).Las Vegas,NV,USA,2016:829-836.
[40] DAMIAN A.Low temperature wafer bonding based on copper nanoparticle sintering for 3D interconnect fabrication[D].Delft:Delft University of Technology,2013.
[41] 独莉.面向三维集成的TSV制备与铜纳米结构低温键合技术研究[D].武汉：华中科技大学，2017.
[42] JO J L,ANAI K,YAMAUCHI S,et al.The properties of Cu sinter paste for pressure sintering at low temperature[C]// Proceedings of the 69th IEEE Electronic Components and Technology Conference (ECTC).Las Vegas,NV,USA,2019:76-80.
[43] JO J L,ANAI K,YAMAUCHI S,et al.The bonding properties of various surface finishes with Cu paste for pressure sintering[C]// Proceedings of the 70th IEEE Electronic Components and Technology Conference (ECTC).Orlando,FL,USA,2020:749-754.
[44] ZHAO J J,YAO M,LEE N C.Nano-Cu sintering paste for high power devices die attach applications[C]// Procee-dings of the 68th IEEE Electronic Components and Techno-logy Conference (ECTC).Taipei,China,2018:557-563.
[45] YAMADA Y,HASEGAWA K,IKEDA Y,et al.Reliability of pressure-free Cu nanoparticle joints for power electro-nic devices[J].Microelectronics Reliability,2019,100/101:113316-1-113316-5.
[46] 周敏波，吴雪，黄海军，等.一种芯片无压烧结互连用纳米铜浆及其制备方法与应用：CN111975011A[P].2020-11-24.
[47] WU X,HUANG H J,ZHANG Z J,et al.Effects of size distributions of copper nanoparticles on the pressureless bonding performance of the copper paste for die attachment[C]// Proceedings of the 20th International Conference on Electronic Packaging Technology.Hong Kong,China,2019:245330-1-245330-4.
[48] LI Z,CHANG S Q,KHUJE S,et al.Recent advancement of emerging nano copper-based printable flexible hybrid electronics[J].ACS Nano,2021,15(4):6211-6232.
[49] NEXTFLEX.Project call[EB/OL].[2021-02-17].https://www.nextflex.us/project-call/.
[50] KWON Y,KIM Y,LEE Y,et al.Ultrahigh conductivity and superior interfacial adhesion of a nanostructured,photonic-sintered copper membrane for printed flexible hybrid electronics[J].ACS Applied Materials & Interfaces,2018,10(50):44071-44079.
[51] ZHANG Y B,ZHANG T,SHI H B,et al.Fabrication of flexible copper patterns by electroless plating with copper nanoparticles as seeds[J].Applied Surface Science,2021,547:149220-1-149220-10.
[52] LU C H,LEU C M,YEH N C.Single-step direct growth of graphene on Cu ink toward flexible hybrid electronic applications by plasma-enhanced chemical vapor deposition[J].ACS Applied Materials & Interfaces,2021,13(5):6951-6959.
基本信息:
DOI：10.13250/j.cnki.wndz.2021.10.003
中图分类号:TG146.11;TB383.1;TN05
引用信息:
[1]曾策,崔西会,廖承举,等.纳米铜在电子封装中的应用研究进展[J].微纳电子技术,2021,58(10):866-874.DOI:10.13250/j.cnki.wndz.2021.10.003.
基金信息:
装备发展部产品研制资助项目(2009ZYHW0011)
2021-09-24
2021-09-24