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利用金属有机化学气相淀积(MOCVD)技术,生长了InGaAs/AlGaAs分别限制压应变双量子阱和单量子阱两种材料结构,通过对不同腔长单管激光器的LIV测试获得内部参数,对单、双阱两种材料结构器件参数进行对比分析,确定了单量子阱结构作为1.06μm大功率半导体激光器的材料结构。通过研究单管激光器的电光转换效率与腔长、注入电流的关系,获得了最高达到57.5%的电光转换效率。对1mm腔长单管激光器进行了大电流高温加速老化测试,结果显示研制出的单管激光器室温下在1.5A工作电流下寿命远大于104h。
Abstract：InGaAs/AlGaAs separated confinement heterostructure compress strained double and single quantum well materials were grown by the metal organic chemical vapor deposition(MOCVD)technology.The single quantum well material of a 1.06 μm high power CW semiconductor laser was chosen through the comparison between two kinds of material internal parameters which were obtained by LIV tests for different cavity length semiconductor laser diodes.The maximal electric-optical conversion efficiency reaches 57.5% through the research on the relationship of the power conversion efficiency,drive current and cavity length.After high-current high-temperature accelerated aging tests of 1mm cavity length laser diode,the result indicates that the lifetime of the laser diode at room temperature is far beyond 104 h at 1.5 A.
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基本信息:
DOI：10.13250/j.cnki.wndz.2009.04.007
中图分类号:TN248.4
引用信息:
[1]任永晓,陈宏泰,张世祖,等.1.06μm大功率连续半导体激光器[J].微纳电子技术,2009,46(04):209-212.DOI:10.13250/j.cnki.wndz.2009.04.007.
2009-04-15
2009-04-15