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使用金属有机气相沉积(MOCVD)设备在4英寸(1英寸=2.54 cm)半绝缘SiC衬底上进行了GaN HEMT结构材料的生长。GaN外延材料(002)和(102)面X射线摇摆曲线半高宽分别为166和238 arcsec,表面粗糙度(Rms)(5μm×5μm)达到0.174 nm,表明GaN外延材料具有较好的晶体质量。另外,喇曼测试发现整个4英寸GaN外延材料应力分布比较均匀,与3英寸GaN外延材料相比应力没有增加。通过非接触霍尔测得GaN HEMT结构材料二维电子气的迁移率达到2 153 cm2/(V.s)、面密度为9.49×1012 cm-2,方块电阻相对标准偏差1.1%,表现出良好的电学性能和均匀性。
Abstract：The GaN HEMT structural materials were grown on the 4 inch(1 inch =2.54 cm) semi-insulating SiC substrates by metal organic chemical vapor deposition(MOCVD) equipment.The full widths at half maximum(FWHMs) of XRD rocking curves for the(002) and(102) surfaces of the GaN epitaxial material are 166 and 238 arcsec,respectively,and the surface roughness(Rms)(5 μm×5 μm) reaches 0.174 nm,which indicate that the GaN epitaxial material has good crystalline quality.The Raman test shows that the stress distribution of the whole 4 inch GaN epitaxial material is more uniform,and the stress does not increase compared with the 3 inch GaN epitaxial material.The contactless Hall test indicates that the two-dimensional electron gas(2DEG) mobility of the GaN HEMT structural material reaches 2 153 cm2/(V·s),the sheet density is 9.49×1012 cm-2,and the relative standard deviation of the square resistance is 1.1%,showing the good electrical performance and uniformity.
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基本信息:
中图分类号:TN304.23
引用信息:
[1]尹甲运,房玉龙,盛百城,等.4英寸SiC衬底上高性能GaN HEMT材料[J].微纳电子技术,2013,50(07):430-433.
2013-07-15
2013-07-15