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过渡金属二硫族化合物(TMD)因其独特的结构和物理特性备受关注。以SiO2/Si为基底,采用机械剥离方法制备多层WSe2薄膜,构造出肖特基场效应晶体管器件,研究了WSe2的场效应和光电性能。测试结果表明,WSe2肖特基晶体管呈现双极特性,空穴迁移率达40 cm2·V-1·s-1,电子迁移率为5.6 cm2·V-1·s-1;通过施加不同漏源电场,对Au-WSe2肖特基势垒进行调控,实现WSe2器件从双极特性转变为纯p型单极导电性质,辅以能带分析,揭示了该结果的内在机理。此外,在520 nm波长的光照下,测出WSe2金属-半导体-金属(MSM)光电探测器的响应度为0.8 A/W,上升时间约为40 ms。表明WSe2在电子和光电探测领域具有良好的发展前景。
Abstract：Transition metal dichalcogenides(TMDs) have attracted much attention due to their unique structures and physical properties. With SiO2/Si as the substrate, WSe2 multilayer thin film were prepared by the mechanical exfoliation method, and Schottky field-effect transistor devices were constructed. The field effect and photoelectric properties of WSe2 were investigated. The test results show that the WSe2 Schottky transistor exhibits ambipolar characteristics, with a hole mobility of up to 40 cm2·V-1·s-1 and an electron mobility of 5.6 cm2·V-1·s-1. The Au-WSe2 Schottky barriers were modulated by applying different drain-source electric fields, enabling the WSe2 device to transform from ambipolar characteristics to pure p-type unipolar conductive properties, and the underlying mechanism was revealed coupled with band analysis. Additionally, the responsivity of the WSe2 metal-semiconductor-metal(MSM) photodetector is measured to be 0.8 A/W, and a rise time of approximately 40 ms under light irradiation with a wavelength of 520 nm. These results indicate that WSe2 has a promising future in the fields of electronics and photoelectric detection.
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基本信息:
DOI：10.13250/j.cnki.wndz.26110301
中图分类号:TN386;TB383.2
引用信息:
[1]代天军,代梅,彭朝烽,等.WSe_2薄膜的场效应和光电响应特性[J].微纳电子技术().DOI:10.13250/j.cnki.wndz.26110301.
基金信息:
国家自然科学基金资助项目（62264001）; 贵州省科技计划项目（QKHJC-ZK[2022]YB009,QKHJC-ZK[2024]YB521）; 贵州省教育厅青年科技人才成长项目（黔教技[2024]195号）; 贵州省高层次创新型人才项目（筑科合同-GCC[2023]007）
2026-09-30
2026-09-30
2026-09-30