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采用磁控溅射技术，以In_2O3和SnO2质量比为9∶1的陶瓷作为溅射靶材，以氩气和氧气的混合气体为溅射气体，在石英衬底上沉积厚度约60 nm的氧化铟锡(ITO)薄膜。研究氩气流量和退火温度对ITO薄膜的方块电阻和透射率的影响规律。结果表明，在氩气流量为55和70 cm3/min条件下，制备的ITO薄膜的方块电阻和透射率平均值分别为88.2Ω/□和78.8%、95.2Ω/□和78.2%,在经过550、580、600℃温度退火600 s后，ITO薄膜的方块电阻分别降至29.6、31.8、43.9Ω/□(氩气流量55 cm3/min)和31.0、32.2、46.3Ω/□(氩气流量70 cm3/min),而透射率分别升至85.4%、85.5%、83.2%(氩气流量55 cm3/min)和85.7%、85.3%、82.9%(氩气流量70 cm3/min)。即退火后，ITO薄膜的方块电阻减小、透射率增大，但是ITO薄膜的方块电阻随着退火温度的升高而增大，透射率随退火温度的升高整体呈减小趋势。
Abstract：Indium tin oxide(ITO) films with thickness approximately 60 nm were deposited on quartz substrates by magnetron sputtering technology, using a ceramic(a mass ratio of In_2O3 and SnO2 at 9∶1) as sputtering target and mixed gases(Ar and O2) as sputtering gas. The influences of Ar flow rate and annealing temperature on sheet resistance and transmittance of ITO films were studied. Results shows that the ITO films prepared at Ar flow rates of 55 and 70 cm3/min exhibit average sheet resistances and transmittances of 88.2 Ω/□ and 78.8%, 95.2 Ω/□ and 78.2%, respectively. After annealing at temperatures of 550, 580, 600 ℃ for 600 s, the sheet resistances decrease to 29.6, 31.8, 43.9 Ω/□(55 cm3/min Ar flow rate) and 31.0, 32.2, 46.3 Ω/□(70 cm3/min Ar flow rate), and the transmittances increase to 85.4%, 85.5%, 83.2%(55 cm3/min Ar flow rate) and 85.7%, 85.3%, 82.9%(70 cm3/min Ar flow rate). The sheet resistance decreases and transmittance increases after annealing. However, the sheet resistance increases and the transmittance generally shows a decreasing trend with the increase of annealing temperature.
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基本信息:
DOI：10.13250/j.cnki.wndz.25090502
中图分类号:O484.4
引用信息:
[1]许德裕,魏爱香,袁新生.氩气流量及退火温度对ITO薄膜光电性能的影响[J].微纳电子技术,2025,62(09):108-113.DOI:10.13250/j.cnki.wndz.25090502.
2025-07-29
2025-07-29
2025-07-29