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掺硼金刚石(BDD)薄膜电极析氧电位高、背景电流小、耐腐蚀的特性,使其在电化学应用方面受到广泛关注。采用热丝化学气相沉积(HFCVD)系统,在钽基底上制备了不同掺硼质量浓度的金刚石薄膜电极,通过扫描电子显微镜(SEM)分析了薄膜表面形貌,利用循环伏安法研究了电极的电化学特性。结果表明:掺硼质量浓度为2 g/L时,制备的薄膜电极质量最好,晶粒尺寸最大,电势窗口达到3.99 V;继续增大掺硼质量浓度,粒径减小,薄膜质量变差,电势窗口逐渐减小。BDD电极在酸、盐、碱性溶液中的析氧电位分别为2.11,1.82和0.86 V,呈递减趋势。
Abstract：A boron-doped diamond(BDD)thin film electrode has the characteristics of the high oxygen evolution potential,low background current and corrosion resistance,thus it is widely used in electrochemical applications.The diamond thin film electrodes with different B-doped mass concentrations were deposited on the tantalum substrate by the hot filament chemical vapor deposition(HFCVD)system.The surface morphology of the thin films was analyzed by the scanning electron microscope(SEM),and the electrochemical properties of the electrodes were studied by cyclic voltammetry.The results show that the film electrode has the best quality,the largest grain size,and the potential window of 3.99 V when the B-doped mass concentration is 2 g/L.With the increase of the B-doped mass concentration,the particle size decreases,the film quality becomes worse,and the potential window decreases gradually.The oxygen evolution potential of the BDD electrode in acid,salt and alkaline solutions are 2.11,1.82 and 0.86 V,respectively.
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基本信息:
DOI：10.13250/j.cnki.wndz.2016.12.010
中图分类号:TB383.2;O646
引用信息:
[1]李海清,高宝红,檀柏梅.掺硼质量浓度对BDD电极电化学特性的影响[J].微纳电子技术,2016,53(12):838-841.DOI:10.13250/j.cnki.wndz.2016.12.010.
基金信息:
国家科技重大专项资助项目(2009ZX02308,2014ZX02301003);; 河北省博士后择优资助项目(B2015003010)