微纳电子技术

传统激光器由于封装键合工艺的要求,需要较大的芯片电极面积,限制了器件尺寸进一步小型化。量子尺寸的衍射效应使量子阱半导体激光器的垂直结平面发散角较大,不利于光束整形,限制了半导体激光器的直接应用。为解决这些问题,采用加入模式扩展层的光波导结构,将垂直发散角由40°减小到22°左右;采用p与n电极同面的脊波导结构,可将激光器同载体直接烧结,无需键合工艺,减小了电极面积,进而缩小了芯片尺寸。25℃,60mA注入电流下进行测试,阈值电流Ith≤10mA,输出功率P约为55mW。

Conventional lasers restricted by packaging and bonding process require chip electrodes with a large area,which limits the further miniaturization of the devices.The vertical junction plane divergent angle of the quantum well semiconductor laser is large due to the quantum size diffraction effect,which is not benefit for beam-shaping and restricts the direct application of the semiconductor laser.To solve these problems,the waveguide structure with the extended mode layer was used,thus the vertical divergent angle was reduced from 40° to about 22°.A ridge waveguide semiconductor laser with the p-and n-electrode in the same side was utilized.Thus the laser and the carrier can be directly packaged without the bonging process,which reduces the area of the chip electrode and the chip size.Then the chip was tested at 60 mA injection current with the temperature of 25 ℃.The chip shows the threshold current Ith≤10 mA and the output power P≈55 mW.