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通过实验探究了在抛光液中加入羟丙基甲基纤维素(HPMC)和聚乙烯吡咯烷酮(PVP)两种水溶性聚合物对多晶硅表面的影响机理。HPMC的加入在多晶硅表面形成氢键,并形成一层保护层,改变多晶硅表面的润湿性,减少抛光液中碱性物质和多晶硅的化学反应,减少磨料与多晶硅表面/抛光垫的直接接触,减小了摩擦。加入的PVP与SiO2颗粒之间通过氢键吸附形成软磨料,提高了抛光液的分散性,减少了SiO2颗粒与多晶硅表面/抛光垫的摩擦。两种水溶性聚合物的协同作用,使得表面缺陷数量减少了94.5%,粗糙度降低至0.2 nm,提高了多晶硅表面质量。
Abstract:The influence mechanisms of the adding of two water-soluble polymers of hydroxypropyl methyl cellulose(HPMC) and polyvinylpyrrolidone(PVP) in the slurry on polysilicon surface were explored by experiments. The addition of HPMC forms hydrogen bonds on the polysilicon surface, HPMC adsorbed on the polysilicon surface to form a protective layer, modifies the surface wettability of polysilicon, reduces chemical reactions between alkaline substances in the slurry and polysilicon, minimizes direct contact between abrasives and polysilicon surface/polishing pad, and decreases friction. The added PVP and SiO2 particles are adsorbed by hydrogen bonds to form soft abrasive, which improves the dispersion of the slurry and reduces the friction between SiO2 particles and polysilicon surface/polishing pad. The synergistic effect of two water-soluble polymers reduces surface defect number by 94.5% and surface roughness to 0.2 nm, improving the surface quality of polysilicon
[1] 范丽萍,李国凯.从半导体市场和集成电路制造谈芯片产能 [J].中国集成电路,2021,30(7):24-26.FAN L P,LI G K.Discussion on chip productivity from semiconductor market and integrated circuit manufacturing [J].China Integrated Circuit,2021,30(7):24-26 (in Chinese).
[2] 李强.集成电路芯片制造技术与工艺分析 [J].数字技术与应用,2023,41(12):46-48.LI Q.Manufacturing technology and process analysis of integrated circuit chip [J].Digital Technology & Application,2023,41(12):46-48 (in Chinese).
[3] RAGHAVAN S,KESWANI M,JIA R H.Particulate science and technology in the engineering of slurries for chemical mechanical planarization [J].KONA Powder and Particle Journal,2008,26:94-105.
[4] ZANTYE P B,KUMAR A,SIKDER A K.Chemical mechanical planarization for microelectronics applications [J].Materials Science and Engineering:R,2004,45(3/4/5/6):89-220.
[5] AIDA H,DOI T,TAKEDA H,et al.Ultraprecision CMP for sapphire,GaN,and SiC for advanced optoelectronics materials [J].Current Applied Physics,2012,12:S41-S46.
[6] 燕禾,吴春蕾,唐旭福,等.化学机械抛光技术研究现状及发展趋势 [J].材料研究与应用,2021,15(4):432-440.YAN H,WU C L,TANG X F,et al.The research status and development trends of chemical mechanical polishing [J].Materials Research and Application,2021,15(4):432-440 (in Chinese).
[7] 熊倩,马奎,杨发顺.FinFET器件结构发展综述 [J].电子技术应用,2021,47(1):21-27.XIONG Q,MA K,YANG F S.Overview of FinFET device structure development [J].Application of Electronic Technique,2021,47(1):21-27 (in Chinese).
[8] DANDU VEERA P R,NATARAJAN A,HEGDE S,et al.Selective polishing of polysilicon during fabrication of microelectromechanical systems devices [J].Journal of the Electrochemical Society,2009,156(6):H487.
[9] SNIEGOWSKI J J.Chemical-mechanical polishing:enhancing the manufacturability of MEMS [J].Precision Engineering,1997,20(2):146-147.
[10] PAVAN P,BEZ R,OLIVO P,et al.Flash memory cells—an overview [J].Proceedings of the IEEE,1997,85(8):1248-1271.
[11] PENTA N K,DANDU VEERA P R,BABU S V.Role of poly(diallyldimethylammonium chloride) in selective polishing of polysilicon over silicon dioxide and silicon nitride films [J].Langmuir,2011,27(7):3502-3510.
[12] WANG Y L,WANG T C,WU J,et al.A modified multi-chemical spray cleaning process for post shallow trench isolation chemical mechanical polishing cleaning application [J].Thin Solid Films,1998,332(1/2):385-390.
[13] PARK J G,PRASAD Y N,KANG Y J,et al.Effect of polysilicon wettability on polishing and organic defects during CMP [J].Journal of the Electrochemical Society,2009,156(11):H869.
[14] PARK S,YOON S H,KIM H,et al.A hybrid polysilicon planarization for suppressing dishing defects [J].Journal of Materials Processing Technology,2012,212(12):2635-2641.
[15] JEON S,HONG J,HONG S,et al.Investigation of abrasive-free slurry for polysilicon buffing chemical mechanical planarization [J].Materials Science in Semiconductor Processing,2021,128:105755.
[16] CHEN G P,LUO G H,PAN G S,et al.Influence of colloidal silica dispersion on the decrease of roughness in silicon chemical mechanical polishing [J].Micro & Nano Letters,2016,11(7):382-385.
[17] HAN W M,HOU M C,HE F M,et al.Ecotoxicity and interacting mechanism of anionic surfactant sodium dodecyl sulfate (SDS) and its mixtures with nonionic surfactant fatty alcohol-polyoxyethlene ether (AEO) [J].Aquatic Toxico-logy,2020,222:105467.
[18] LI Y L,HE Y G,WANG C W,et al.Study on the mechanism of micro-defect reduction during Si final polishing with water-soluble polymers [J].ECS Journal of Solid State Science and Technology,2018,7(10):P575-P582.
[19] GONG H,PAN G S,GU Z H,et al.Effect of modified silica abrasive particles on nanosized particle deposition in final polishing of silicon wafers [J].Tribology Transactions,2014,57(2):366-372.
[20] KIM S K,KIM Y H,PAIK U,et al.The effect of the physico-chemical properties of cellulosic polymers on the Si wafer polishing process [J].Journal of Electroceramics,2006,17(2):835-839.
[21] PEREIRA-LACHATAIGNERAIS J,PONS R,PANIZZA P,et al.Study and formation of vesicle systems with low polydispersity index by ultrasound method [J].Chemistry and Physics of Lipids,2006,140(1/2):88-97.
[22] YU L,LIU W L,ZHANG Z F,et al.Synthesis of colloid silica coated with ceria nano-particles with the assistance of PVP [J].Chinese Chemical Letters,2015,26(6):700-704.
[23] YANG J,LU S B,WANG H B,et al.Effects of HEC concentration on silicon polishing [J].Silicon,2019,11(4):2059-2066.
基本信息:
DOI:10.13250/j.cnki.wndz.25040203
中图分类号:TN405
引用信息:
[1]张潇,周建伟,杨云点,等.水溶性聚合物提高多晶硅CMP表面质量的机理[J].微纳电子技术,2025,62(04):105-113.DOI:10.13250/j.cnki.wndz.25040203.
基金信息:
国家自然科学基金(62104087); 中国博士后基金(2024M751207); 河北工业大学创新研究院(石家庄)石家庄市科技合作专项基金资助(SJZZXB23003)
2025-04-15
2025-04-15