微纳电子技术

对976 nm激光器的三种非对称波导结构,即非对称直波导结构、非对称渐变波导结构和非对称梯形波导结构进行了基模光场和折射率分布的模拟,通过与对称波导结构的模拟结果进行对比,得到非对称直波导结构和非对称梯形波导结构的量子阱限制因子ΓQW较小,这样在相同量子阱厚度dQW下,dQW/ΓQW的值较大,可获得较大的光点尺寸,改善出光功率。将四种结构制作成2 mm腔长的1 cm巴条,在25℃室温连续测试和110 A的条件下,其中以非对称直波导结构电压最低为1.45 V,电光转换效率最高达到70%。对非对称直波导结构、非对称渐变波导结构和对称渐变波导结构进行内部参数提取,结果表明内量子效率基本一致,内损耗均小于1 cm-1。

Three kinds of asymmetrical waveguide structures for the 976 nm laser,such as asymmetrical straight waveguide,asymmetrical gradual change waveguide and asymmetrical trapeziform waveguide,were simulated on the fundamental optical mode profile and refractive index distribution.Compared with the simulated results of the symmetrical waveguide,the result shows that the quantum well confinement factors ΓQW of the asymmetrical straight waveguide and asymmetrical trapeziform waveguide are less.Under the same quantum well thickness dQW,the value of dQW/ΓQW is greater.Then the larger light spot size was obtained,and the output light power was improved.With four structures as 1 cm bar with 2 mm cavity length,the minimum voltage of the asymmetrical straight waveguide structure is 1.45 V and the maximum electro-optical conversion efficiency reaches 70% at 110 A and 25 ℃ room temperature continue test.The interior parameters were extracted from the asymmetrical straight waveguide,asymmetrical gradual change waveguide and symmetrical gradual change waveguide structures.The results show that the inner quantum efficiencies are roughly identical and the inner losses are all less than 1 cm-1.