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采用燃烧合成法制备碳化硅(SiC)粉料,调整氢气和氩气体积流量比以及高纯氯化氢气体体积流量,使氮、铝和钒浓度低于二次离子质谱仪的检测下限,硼和钛浓度接近检测下限。使用制备的高纯SiC粉料生长单晶,获得电阻率大于1×109Ω·cm的衬底,粉料达到高纯半绝缘水平。通过研究发现,增加氢气体积流量可以降低粉料中的氮浓度,并使氮浓度低于检测限1×1016 cm-3,但是氢气体积流量过高会加重坩埚损耗,影响坩埚寿命和工艺稳定性;高纯氯化氢气体可以降低粉料中硼、铝、钒和钛的浓度,但其体积流量不宜过大,否则会引入新的氮杂质;粉料的色度a*值与氮浓度呈反比关系,利用分光色差仪测试色度a*值判断粉料氮浓度高低。
Abstract：The silicon carbide(SiC)powder was prepared by the combustion synthesis method.By adjusting the volume flow ratio of hydrogen to argon and the volume flow of high purity hydrogen chloride,the concentrations of nitrogen,aluminum and vanadium are lower than the detection limit of the secondary ion mass spectrometer,and the concentrations of boron and titanium are closer to the detection limit.The SiC single crystal was grown by the prepared high purity SiC powder,and the substrate with a resistivity of more than 1×109Ω·cm was obtained.The powder reached the high purity semi-insulation level.The research results show that increasing the hydrogen volume flow can reduce the nitrogen concentration in the SiC powder,and make the nitrogen concentration below the detection limit of 1×1016 cm-3,but excessive hydrogen volume flow will aggravate the loss of the crucible and influence the crucible life and process stability.The high purity hydrogen chloride gas can reduce the concentrations of boron,aluminum,vanadium and titanium in the powder,but its volume flow should not be too large,otherwise introducing new nitrogen impurities.The chroma a* value of the powder is inversely proportional to the nitrogen concentration.The chroma a* value was measured by the spectrophotometer to judge the nitrogen concentration of the powder.
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基本信息:
DOI：10.13250/j.cnki.wndz.2020.05.014
中图分类号:TN304
引用信息:
[1]高卫,赵丽霞,李召永,等.高纯SiC粉料中杂质浓度的控制和测试[J].微纳电子技术,2020,57(05):415-420.DOI:10.13250/j.cnki.wndz.2020.05.014.
基金信息:
河北省科技厅重点研发计划资助项目（18211022D）
2020-04-23
2020-04-23