| 302 | 2 | 35 |
| 下载次数 | 被引频次 | 阅读次数 |
介绍了三类常见的低k介质材料,并对空气隙(k=1)的发展进行了探讨;讨论了引起等离子体损伤的机理和传统的O2等离子体去胶工艺面临的困难;最后综述了近年来国际上提出的低损伤等离子体去胶工艺的研究进展。人们已经开发出一些对低k材料进行硅化处理的工艺,可以部分修复在刻蚀和去胶处理过程中被消耗掉的有机官能团。基于金属硬掩膜层和新型等离子体化学的集成方案将会展示出颇具前景的结果。
Abstract：Three kinds of common low-k dielectric materials are introduced,and the progress of the air-gap(k=1) is discussed.The mechanism of plasma damage and the difficulties of the conventional O2 plasma stripping process are briefly discussed.Finally,the research progresses of the low-damage plasma stripping process in the world recently are summarized.Some siliconizing processes of low-k materials are developed to partially restore the organic functional groups consumed in the etching and stripping process.The integration scheme based on metal hard mask(MHM) and novel plasma stripping process will show a promising result.
[1]ITRS.International technology roadmap for semiconductors[EB/OL].[2011-05-07].http://www.itrs.net/Links/2005ITRS/Interconnect2005.pdf.
[2]ITRS.International technology roadmap for semiconductors[EB/OL].[2011-05-07].http://www.itrs.net/Links/2009ITRS/2009Chapters_2009Tables/2009_Interconnect.pdf.
[3]WILLI V,ROBERT D M,GERAUD D.Low dielectric cons-tant materials[J].Chemical Reviews,2010,110(1):56-102.
[4]RAJESH M,BING J,STEVE S,et al.Low-k damage re-duction using a modified plasma strip process[J].Solid-State-Technology,2010,53(5):11-13.
[5]SHI H,HUANG H,BAO J,et al.Plasma altered layer model for plasma damage characterization of porous OSG films[C]//Proceedings of IEEE International Interconnect Technology Confe-rence.Sapporo,Hokkaido,Japan,2009:78-80.
[6]JEONGHEE C,JACK Y,HAEJUNG P,et al.High density large area hydrogen plasma by hollow cathode plasma array[J].Surface and Coatings Technology,2010,205(5):1532-1535.
[7]SONG L X,CE Q,LI D,et al.Study of plasma-induced da-mage of porous ultralow-kdielectric films during photoresist strip-ping[J].J Vac Sci Technol:B,2007,25(1):156-163.
[8]BUTSURIN J,TOSHIHISA N,SEIJI S,et al.Damage me-chanism in low-dielectric(low-k)films during plasma processes[J].J Vac Sci Technol:B,2008,26(6):1926-1932.
[9]SHI H,HUANG H,IM J,et al.Minimization of plasma ashing damage to OSG low-kdielectrics[C]//Proceedings of IEEE International Interconnect Technology Conference.San Francisco,USA,2010:1-3.
[10]秦文芳.32nm互连刻蚀:成长的烦恼[J].半导体制造,2010,11(4):21-25.
[11]王娟,张长瑞,冯坚.低介电常数介质薄膜的研究进展[J].化学进展,2005,17(6):1001-1011.
[12]翁寿松.低k绝缘层及其设备[J].微纳电子技术,2005,42(2):90-94.
[13]苏祥林,吴振宇,汪家友,等.低k层间介质研究进展[J].微纳电子技术,2005,42(10):463-468.
[14]SINGER P.Air gaps:小题大作[J].集成电路应用,2007(9):29.
[15]KUNNEN E,BAKLANOV M R,FRANQUET A,et al.Effect of energetic ions on plasma damage of porous SiOCH low-k materials[J].J Vac Sci Technol:B,2010,28(3):450-459.
[16]BAO J,SHI H,LIU J,et al.Mechanistic study of plasma damage of low-kdielectric surfaces[J].J Vac Sci Technol:B,2008,26(1):219-226.
[17]SHI H,BAO J,HUANG H,et al.Mechanistic study of CO2plasma damage to OSG low-k dielectrics[C]//Procee-dings of IEEE International Interconnect Technology Confe-rence.San Francisco,USA,2008:31-33.
[18]SEIJI S,KEISUKE S,KATSUNORI I.Generating high-ef-ficiency neutral beams by using negative ions in an inductively coupled plasma source[J].J Vac Sci Technol:A,2002,20(5):1556-1573.
[19]WHITE B,WANG Q,ECONOMOU D,et al.Neutral oxygen beam stripping of photo resist on porous ultra low-k mate-rials[C]//Proceedings of IEEE International Interconnect Tech-nology Conference.San Francisco,USA,2003:153-155.
[20]GOLDMAN M A,GRAVES D B,ANTONELLI G A,et al.Oxygen radical and plasma damage of low-k organosilicate glass materials:diffusion-controlled mechanism for carbon deple-tion[J].J Appl Phys,2009106(1):013311-013311-7.
[21]KUO M S,PAL A R,OEHRLEIN G S,et al.Mechanistic study of untralowk-compatible carbon dioxide in situ photore-sist ashing processes:process performance and influence on ULΚmaterial modification[J].J Vac Sci Technol:B,2010,28(5):952-959.
[22]BAO J,SHI H,HUANG H,et al.Oxygen plasma damage to blanket and patterned ultralow-k surfaces[J].J Vac Sci Technol:A,2010,28(2):207-215.
[23]LAURA P.Low-kdrives new stripping solutions[J].Semi-conductor International,2002,25(12):57-62.
[24]LOUIS D,ASSOUS M,BLANC R,et al.Wet or plasma clean?competing or complementary?a dual damascene study with Si—OC—H dielectric on copper wiring[C]//Procee-dings of IEEE International Interconnect Technology Confe-rence.San Francisco,USA,2001:289-291.
[25]GUIDO J S,GOTTLIEB S O,LAZZERI P,et al.On the photoresist stripping and damage of ultralowk dielectric ma-terials using remote H2-and D2-based discharges[J].J Vac Sci Technol:B,2007,25(5):1593-1602.
[26]KUO M S,HUA X F,OEHRLEIN G S,et al.Influence of C4F8/Ar-based etching and H2-based remote plasma ashing processes on ultralowk materials modifications[J].J Vac Sci Technol:B,2010,28(2):284-294.
[27]AIMADEDDINE M,ARNAL V,ROY D,et al.Effect of CH4plasma on porous dielectric modification&pore sealing for advanced interconnect technology nodes[C]//Procee-dings of IEEE International Interconnect Technology Con-ference.San Francisco,USA,2006:81-83.
[28]AIMADEDDINE M,JOUSSEAUME V,ARNAL V,et al.Ro-bust integration of an ULK SiOCH dielectric(k=2.3)for high performance32nm node BEOL[C]//Proceedings of IEEE International Interconnect Technology Conference.San Francisco,USA,2007:175-177.
[29]TRAVALY Y,AELST V J,TRUFFERT V,et al.Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials[C]//Proceedings of IEEE International Interconnect Tech-nology Conference.San Francisco,USA,2008:52-54.
[30]IKEDA A,TRAVALY Y,HUMBERT A,et al.Low-k properties and integration processes enabling reliable inter-connect scaling to the32nm technology node[C]//Pro-ceedings of IEEE International Interconnect Technology Con-ference.San Francisco,USA,2006:42-44.
基本信息:
中图分类号:TN405
引用信息:
[1]吴元伟,韩传余,赵玲利,等.超低k介质材料低损伤等离子体去胶工艺进展[J].微纳电子技术,2011,48(11):733-738.
基金信息:
国家科技02重大专项基金资助项目(2009ZX0203008)
2011-11-15
2011-11-15