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针对高集成密度、高散热封装外壳发展需求，基于氮化铝(AlN)高温共烧陶瓷(HTCC)多层基板，结合直接镀铜(DPC)工艺，提出了一种薄厚膜相结合的高散热封装基板及其制备方法。重点对氮化铝HTCC与表面铜(Cu)层间的结合力进行研究和优化，通过扫描电子显微镜(SEM)、能谱仪(EDS)和剥离强度测试仪分析和研究了界面的微观结构和力学性能。研究结果表明：与氮化铝/钛钨(TiW)/Cu相比，氮化铝/钛(Ti)/Cu界面的缺陷更少，金属Ti的黏附性能更优，拉脱断裂面在陶瓷基板上。当采用厚度为400 nm的Ti作为黏附层时，表面金属化剥离强度高达592 MPa,实现了高界面结合力，保证了产品封装性能的稳定性。
Abstract：Aiming at the development needs of high integration density and high heat dissipation packaging shell, a high heat dissipation packaging substrate combined with thin and thick films and its preparation method were proposed based on aluminum nitride(AlN) high temperature co-fired ceramic(HTCC) multilayer substrate and direct plated copper(DPC) process. The bonding force between aluminum nitride HTCC and surface copper(Cu) layer was mainly studied and optimized. The microstructure and mechanical property of the interface were analyzed and studied through scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and peel strength tester. The research results indicate that compared with aluminum nitride/titanium tungsten(TiW)/Cu, aluminum nitride/titanium(Ti)/Cu interface has fewer defects and better adhesion performance of metal Ti, and the detachment fracture surface is on the ceramic substrate. When using Ti with a thickness of 400 nm as the adhesive layer, the surface metallization peel strength reaches 592 MPa, achieving high interfacial bonding force and ensuring the stability of product packaging performance.
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基本信息:
DOI：10.13250/j.cnki.wndz.24070505
中图分类号:TN405
引用信息:
[1]杨欢,张鹤,杨振涛,等.基于氮化铝HTCC的表面Cu互连制备技术[J].微纳电子技术,2024,61(07):162-167.DOI:10.13250/j.cnki.wndz.24070505.
2024-07-15
2024-07-15