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基于高温环境下压力实时监测的广泛需求,设计并制备了一种最大量程为1.5 MPa的绝缘体上硅(SOI)压阻式压力传感器。根据压阻效应原理和薄板变形理论,完成了传感器力学结构和电学性能的设计,采用微电子机械系统(MEMS)加工工艺完成了敏感芯片的制备,并使用了一种可耐300℃高温的封装技术。实验中采用了常温压力测试平台和压力-温度复合测试平台进行测试,测试结果表明,封装后的传感器在常温环境下具有良好的非线性误差、迟滞性和重复性,其灵敏度可达到0.082 8 mV/kPa,同时在300℃高温环境中其灵敏度仍可达0.063 8 mV/kPa。
Abstract：Based on the wide demand for real-time pressure monitoring in high temperature environment,apiezoresistive pressure sensor with the maximum range of 1.5 MPa based on silicon-on-insulator(SOI)was designed and prepared.According to the principle of piezoresistive effect and the theory of thin plate deformation,the mechanical structure and electrical properties of the sensor were designed.The sensitive chip was prepared by the micro-electromechanical system(MEMS)processing technology,and a packaging technology to withstand high temperature of 300℃ was used.A room temperature pressure test platform and a pressure-temperature composite test platform were used for testing in the experiment.The test results show that the encapsulated sensor has good nonlinear error,hysteresis and repeatability at room temperature,and its sensitivity can reach0.082 8 mV/kPa,while its sensitivity can still reach0.063 8 mV/kPa at 300℃ high temperature.
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基本信息:
DOI：10.13250/j.cnki.wndz.2021.04.007
中图分类号:TP212
引用信息:
[1]单存良,梁庭,王文涛,等.基于SOI的MEMS高温压阻式压力传感器[J].微纳电子技术,2021,58(04):325-331.DOI:10.13250/j.cnki.wndz.2021.04.007.
基金信息:
山西省重点研发计划项目（201903D121123）; 山西省自然科学基金项目（201801D121157,201801D221203）
2021-03-26
2021-03-26