微纳电子技术

针对动力设备实时温度测量的需求，研究了一种快响应、宽温区的石墨烯温度传感器。传感器芯片由金属衬底、绝缘层、金属电极层、石墨烯传感层、保护层和金属抗氧化涂层组成。以热导率高的金属为衬底，另外在传统的陶瓷保护层的基础上增加四元金属抗氧化涂层，能够有效阻挡高温下氧气的渗透。利用有限元软件进行分析，当温度由室温升高到1 200℃时，采用硬质合金、氧化铝、氮化硅为衬底的芯片响应时间分别为55、660、75 ms,衬底热导率越高，响应速度越快。传感器芯片各层厚度的变化对热应力的影响极大，当金属衬底厚1 000μm、绝缘层厚0.1μm、保护层厚0.5μm、氮化钛打底层厚0.04μm、氮铝化钛过渡层厚0.3μm、钛铝硅氮功能层厚0.7μm、氮化钛硅着色层厚0.5μm时，最大热应力较小，为24 966 MPa。该研究为拓展石墨烯温度传感器的耐温范围提供新的思路，为石墨烯传感器应用于高温瞬态测量提供可行性方案。

To meet the demand for real-time temperature measurement of power equipment, a fast-response, wide-temperature-range graphene temperature sensor was investigated. The sensor chip is composed of a metal substrate, an insulating layer, a metal electrode layer, a graphene sensing layer, a protective layer, and a metal anti-oxidation coating. A high thermal conductivity metal was used as the substrate, and a quaternary metal anti-oxidation coating was added on the basis of the conventional ceramic protective layer, which effectively blocks the penetration of oxygen at high temperature. Finite element software was used for analysis. When the temperature raises from room temperature to 1 200 ℃, the response times of the chips with cemented carbide, alumina, and silicon nitride as substrates are 55, 660, and 75 ms, respectively. The higher the thermal conductivity of the substrate, the faster the response speed. The thickness variations of each layer of the sensor chip have a significant impact on thermal stress. When the metal substrate is 1 000 μm, the insulating layer is 0.1 μm, the protective layer is 0.5 μm, the titanium nitride underlayer is 0.04 μm, the titanium aluminum nitride transition layer is 0.3 μm, the titanium aluminum silicon nitride functional layer is 0.7 μm, and the titanium nitride silicon coloring layer is 0.5 μm, the maximum thermal stress is relatively low, which is 24 966 MPa. The research provides a novel idea for expanding the temperature range of graphene temperature sensors and offers a feasible solution for the application of graphene sensors in high-temperature transient measurements.