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基于半导体硅的压阻效应,研制了一种MEMS大量程压力传感器。为了实现大量程压力测量,采用了不锈钢材质制作了压力敏感膜片。利用有限元分析软件对传感器敏感芯体进行了结构建模仿真分析和优化设计。采用玻璃微熔技术将敏感电阻粘结固定在不锈钢敏感膜片上。利用成熟的微电子机械系统(MEMS)加工工艺,完成了可以在高温下工作的绝缘体上硅(SOI)敏感电阻的制作。采用激光焊接方法将敏感芯体焊接到传感器基座上,提高了结构的机械强度。信号调理采用了压力信号专用集成电路(ASIC),具有高精度的放大和温度补偿功能。完成了整体封装和调试后,对压力传感器的主要性能指标进行了测试,结果表明压力传感器的工作温度为-55~150℃,压力量程0~42 MPa,精度<0.5%。
Abstract：A MEMS pressure sensor for wide measurement range was developed based on the piezoresistive effect of semiconductor silicon.The pressure sensitive membrane was fabricated with stainless steel material for meeting the wide measurement range requirement.The structural modeling simulation analysis and optimal design of the sensor sensitive core were carried out by finite element analysis software.The sensitive resistances were stuck to the stainless steel sensitive membrane by the glass micro-fused technology.The silicon-on-insulator(SOI)sensitive resistance working at high temperature was fabricated using the mature micro-electromechanical system(MEMS)technology.The sensitive core was welded to the sensor pedestal with the laser welding method to improve the mechanical strength of the structure.Signal conditioning was carried out by the pressure signal application-specific integrated circuit(ASIC)with high precision amplification and temperature compensation functions.After the overall packaging and commissioning,the main performance parameters of the pressure sensor were tested.The test results show that the work temperature of the pressure sensor is-55-150 ℃,the pressure measurement range is 0-42 MPa,and the measurement accuracy is less than 0.5%.
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基本信息:
DOI：10.13250/j.cnki.wndz.2018.06.007
中图分类号:TP212
引用信息:
[1]卞玉民,鲁磊,杨拥军.一种基于微熔技术的MEMS大量程压力传感器[J].微纳电子技术,2018,55(06):422-427.DOI:10.13250/j.cnki.wndz.2018.06.007.
2018-05-04
2018-05-04