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作为第三代宽禁带半导体器件,GaN基HFET功率器件具耐高压、高频、导通电阻小等优良特性,在电力电子器件方面也具有卓越的优势。概述了基于电力电子方面应用的AlGaN/GaN HFET功率器件的研究进展。从器件的结构入手,介绍了AlGaN/GaN HEMT的研究现状,从栅材料的选取以及栅介质层的结构对器件性能的影响着手,对AlGaN/GaN MIS-HFET的研究进行了详细的介绍。分析了场板改善器件击穿特性的原理以及各种场板结构AlGaN/GaNHFET器件的研究进展。论述了实现增强型器件不同的方法。阐述了GaN基HFET功率器件在材料、器件结构、稳定性、工艺等方面所面临的挑战。最后探讨了GaN基HFET功率器件未来的发展趋势。
Abstract：As the third generation of the wide gap semiconductor device,GaN HFETs have excellent adventages in power electronic applications,including the high breakdown voltage,high frequency and low on-resistance.Based on the applications in the power electronic field,the reseach developments of the AlGaN/GaN HFET power device are introduced.The research status of the AlGaN/GaN HEMT are introduced on the basis of the structures of the devices.Based on the effects of the gate materials and various gate structures on the performance of the devices,the researches of the AlGaN/GaN MIS-HFET are introduced in detail.The principle of the field plate in improving the GaN HFET breakdown property and the research developments on different kinds of AlGaN/GaN HFET field plates are analyzed.Different ways to realize the enhancement-mode AlGaN/GaN HFET are introduced.Finally,the challenges about the materials,device structure,reliability and technology as well as the development tendencies of the GaN-based HFET power devices are presented.
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基本信息:
中图分类号:TN386.3
引用信息:
[1]贾利芳,樊中朝,颜伟,等.GaN基HFET电力电子器件的研究[J].微纳电子技术,2012,49(11):716-725.
基金信息:
国家重点基础研究发展计划(973计划)资助项目(2010CB934104)
2012-11-15
2012-11-15