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在化学机械抛光(CMP)过程中，晶圆表面磨料的分布状态无法通过实验直接观测。掌握磨料的具体分布状态有助于深入理解化学机械抛光的作用机理并为工艺优化提供参考。在不同的上抛光垫渐开线沟槽数量、沟槽深度、给液口位置条件下，利用ANSYS FLUENT软件模拟了硅晶圆表面磨料分布状态。结果表明，抛光液从上抛光垫内侧给液口注入能够提高磨料利用率。上抛光垫左侧给液口注入相较于中间给液口注入，晶圆表面磨料密度提升了约18.33%。增加上抛光垫径向沟槽数量和沟槽深度，能够增强抛光液对磨料的输运能力。上抛光垫沟槽深度4.5 mm相较于1.5 mm,磨料速度提升了约15.31%。
Abstract：During the chemical mechanical polishing(CMP) process, the distribution state of abrasives on the wafer surface cannot be directly observed experimentally. Understanding the specific distribution state of abrasives can help to deeply comprehend the mechanism of chemical mechanical polishing and provide a reference for process optimization. The distribution state of abrasives on the silicon wafer surface was simulated using ANSYS FLUENT software under varying conditions of involute groove count, groove depth and slurry inlet location on the upper polishing pad. The results show that injecting the polishing slurry from the inner side inlets of the upper polishing pad can enhance the utilization rate of abrasives. The abrasive density on the surface of wafer increases by approximately 18.33% when the slurry is injected from the left side inlets of the upper polishing pad compared to the central inlets. Increasing the number of radial grooves and the grooves depths on the upper polishing pad can enhance the transport capacity of the polishing slurry for abrasives. The abrasive velocity increases by about 15.31% when the groove depth on the upper polishing pad is 4.5 mm compared to that of 1.5 mm.
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基本信息:
DOI：10.13250/j.cnki.wndz.25110501
中图分类号:TN305.2
引用信息:
[1]王现刚,刘奕然,曹军.双面化学机械抛光工艺中磨料分布仿真分析[J].微纳电子技术,2025,62(11):126-134.DOI:10.13250/j.cnki.wndz.25110501.
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