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针对微机电系统(MEMS)微压传感器无法同时提高灵敏度与线性度的问题，设计了一种新型的梁-膜结构，与常规的C型和E型结构比较，该结构具有灵敏度高、易加工的特点。根据所研究的量程，设计了压敏电阻尺寸和阻值。通过调整结构梁厚度、敏感膜片尺寸等参数，并使用仿真软件建立力学模型，得到输出灵敏度和线性度等仿真结果，以优化梁-膜结构设计。采用绝缘体上硅(SOI)晶圆作为衬底，通过标准MEMS芯片生产流程实现微压芯片的制备，并采用引线键合的方式完成了芯片的封装，形成了传感器。测试结果显示在0～1 kPa量程范围内，微压传感器的灵敏度可达4.5 mV/(V·kPa),非线性误差为0.11%,其输出电压噪声波动在±9 Pa以内。
Abstract：To solve the problem that the sensitivity and linearity of micro-electromechanical system(MEMS) micro-pressure sensor couldn't be improved simultaneously, a new beam-diaphragm structure was designed. Compared with the common C-type and E-type structures, it has the characteristics of high sensitivity and easy machining. According to the studied range, the size and resistance value of piezoresistors were designed. In order to optimize the design of the beam-diaphragm structure, the structural beam thickness and the size of sensitive diaphragm were adjusted, the mechanical model was established by simulation software, and the simulation results of output sensitivity and linearity were obtained. With silicon on insulator(SOI) wafer as substrate, the preparation of micro-pressure chip was realized by standard MEMS chip production process, and then the chip was packaged into a sensor by wire bonding. The test results show that in the range of 0-1 kPa, the sensitivity of micro-pressure sensor can reach 4.5 mV/(V·kPa), nonlinearity error is 0.11%, and the output voltage noise fluctuation is within ±9 Pa.
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基本信息:
DOI：10.13250/j.cnki.wndz.24110405
中图分类号:TH-39;TP212
引用信息:
[1]张林,胡宗达,张坤,等.基于梁-膜结构的MEMS微压传感器设计与制备[J].微纳电子技术,2024,61(11):120-126.DOI:10.13250/j.cnki.wndz.24110405.
基金信息:
国家重点研发计划项目(2023YFB3209000)
2024-11-15
2024-11-15